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PDF PJ2N3906 Data sheet ( Hoja de datos )
| Número de pieza | PJ2N3906 | |
| Descripción | PNP Epitaxial Silicon Transistor | |
| Fabricantes | Promax Johnton | |
| Logotipo |  |
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GENERAL PURPO SE TRANSISTO R
• Collector-Emitter Voltage: VCEO = 40V
• Collector Dissipation: PC (max) = 625 mW
PJ2N3906
PNP Epitaxial Silicon Transistor
. TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
T stg
Value
40
40
5
200
625
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N3906CT
PJ2N3906CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
S y m bo l
Te st Conditions
Collector-Base Breakdown Voltage
*Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Curent
Base Cut-off Current
*DC Current Gain
BVCBO
BVCEO
BVEBO
ICEX
IBL
hFE
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Produce
Turn On Time
Turn Off Time
VCE(sat)
VBE(sat)
Cob
fT
ton
toff
*Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2%
IC= 10μA , IE=0
IC= 1mA , IB=0
IE=10μA , IC=0
VCE= 30V , VBE = 3V
VCE= 30V , VBE = 3V
Ic =0.1mA, VCE =1V
Ic =1mA, VCE =1V
Ic=10mA; VCE =1V
Ic =50 mA, VCE =1V
Ic =100 mA, VCE =1V
IC= 10 mA , IB=1mA
IC= 50mA , IB=5mA
IC= 10 mA , IB=1mA
IC= 50mA , IB=5mA
VCB =5V, IE =0
f=1MHz
Ic =10 mA, VCE =20V
f=100MHz
Vcc =3 V, VBE =0.5V
Ic =10 mA, IB1 =1mA
Vcc =3V, Ic =1mA
IB1=IB2=1 mA
Min Typ Max Uni
t
40 V
40 V
6V
50 nA
50 nA
60
80
100 300
60
30
0.25 V
0.4 V
0.65 0.85 V
0.95 V
4.5 pF
250 MHz
70 ns
250 ns
1-3 2002/01.rev.A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PJ2N3906.PDF ] | |
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