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Datasheet SSI2N80A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SSI2N80A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.)
SSW/I2N80A
BVDSS = 800 V RDS(on) = |  Fairchild Semiconductor | mosfet |
SSI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SSI10N60B | 600V N-Channel MOSFET SSW10N60B / SSI10N60B
November 2001
SSW10N60B / SSI10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especiall Fairchild Semiconductor mosfet | | |
| 2 | SSI122 | 4-Channel Thin Film Read/Write Device
DataSheet4U.com
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et4U  Silicon Systems data | | |
| 3 | SSI1N50B | 520V N-Channel MOSFET SSW1N50B / SSI1N50B
SSW1N50B / SSI1N50B
520V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minim Fairchild Semiconductor mosfet | | |
| 4 | SSI1N60A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A
D2-PAK
2
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low R Fairchild Semiconductor mosfet | | |
| 5 | SSI1N60B | 600V N-Channel MOSFET SSW1N60B / SSI1N60B
November 2001
SSW1N60B / SSI1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta Fairchild Semiconductor mosfet | | |
| 6 | SSI204 | LOW POWER DTMF RECEIVER Silicon Systems receiver | | |
| 7 | SSI2154 | 800mA 20V Dual N-Channel MOSFET SSI2154
Elektronische Bauelemente 800mA, 20V Dual N-Channel MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with l  SeCoS Halbleitertechnologie mosfet | |
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