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부품번호 | DTA114YM3T5G 기능 |
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기능 | Digital Transistors (BRT) PNP Silicon Surface Mount Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 12 페이지수
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DTA114EM3T5G Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT−723 Package can be Soldered using Wave or Reflow.
• Available in 4 mm, 8000 Unit Tape & Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCBO
VCEO
IC
50
50
100
Unit
Vdc
Vdc
mAdc
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PNP SILICON
DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
1
2
SOT−723
CASE 631AA
Style 1
MARKING
DIAGRAM
XX M
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0
1
Publication Order Number:
DTA114EM3/D
DTA114EM3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Input Resistor
DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
R1 7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
Resistor Ratio
/
DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G
DTA115EM3T5G
DTA114YM3T5G
DTA114TM3T5G/DTA143TM3T5G
DTA123EM3T5G/DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA144WM3T5G
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
300
250
200
150
100
50
0
−50
RqJA = 480°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
kW
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4
4페이지 1
IC/IB = 10
0.1
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G
TA = −25°C
25°C
75°C
1000
100
TA = 75°C
25°C
−25°C
0.01 0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
40
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
1
f = 1 MHz
100
TA = 75°C
25°C
0.8
lE = 0 V
TA = 25°C
10
−25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
00
0.001
10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
TA = −25°C
25°C
10 75°C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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