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PDF MMVL3102T1 Data sheet ( Hoja de datos )
| Número de pieza | MMVL3102T1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid–state reliability
in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Device Marking: 4C
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL3102T1 SOD–323
3000 / Tape & Reel
MMVL3102T1
22 pF (Nominal) 30 VOLTS
VOLTAGEVARIABLE
CAPACITANCEDIODE
1
2
PLASTIC, CASE 477
SOD– 323
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMALCHARACTERISTICS
30 Vdc
200 mAdc
Symbol
Characteristic
Max
Unit
PD Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ, Tstg
Junction and Storage Temperature
*FR–4 Minimum Pad
200
1.57
635
150
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
30
—
IR — —
TCC — 300
Max
—
0.1
Unit
Vdc
µAdc
— ppm/°C
Device
MMVL3102T1
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
20 22 25
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min Max
4.5 4.8
MMVL3102T1–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMVL3102T1.PDF ] | |
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