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PDF MMVL409T1 Data sheet ( Hoja de datos )
| Número de pieza | MMVL409T1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed for general frequency control and tuning
applications. They provide solid–state reliability in replacement of mechanical
tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Device Marking: X5
1
CATHODE
2
ANODE
MMVL409T1
VOLTAGEVARIABLE
CAPACITANCEDIODE
1
2
PLASTIC, CASE 477
SOD– 323
Device
MMVL409T1
ORDERING INFORMATION
Package
Shipping
SOD–323
3000 / Tape & Reel
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMALCHARACTERISTICS
20 Vdc
200 mAdc
Symbol
Characteristic
Max
Unit
PD Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C
1.57
mW/°C
RθJA Thermal Resistance Junction to Ambient 635 °C/W
TJ, Tstg
Junction and Storage Temperature
150 °C
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse BreakdownVoltage
V(BR)R
(IR = 10 µAdc)
Reverse Voltage Leakage Current
IR
(VR = 15 Vdc)
Diode Capacitance Temperature Coefficient
TCC
(VR = 3.0 Vdc, f = 1.0 MHz)
Min
20
—
—
Typ
—
—
300
Max
—
Unit
Vdc
0.1 µAdc
— ppm/°C
Ct, Diode Capacitance
Q, Figure of Merit
VR = 3.0 Vdc, f = 1.0 MHz
VR = 3.0 Vdc
pF f = 50 MHz
Device
Min Nom Max
Min
MMVL409T1
26 29 32
200
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz(1)
Min Max
1.5 1.9
MMVL409T1–1/2
1 page | ||
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| PDF Descargar | [ Datasheet MMVL409T1.PDF ] | |
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