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PDF MMVL809T1 Data sheet ( Hoja de datos )
| Número de pieza | MMVL809T1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid–state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Device Marking: 5K
1
CATHODE
2
ANODE
MMVL809T1
4.5 – 6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
PLASTIC, CASE 477
SOD– 323
Device
MMVL809T1
ORDERING INFORMATION
Package
Shipping
SOD–323
3000 / Tape & Reel
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMALCHARACTERISTICS
20 Vdc
20 mAdc
Symbol
Characteristic
Max
Unit
PD Total Device Dissipation FR–5 Board,* 200 mW
TA = 25°C
Derate above 25°C
1.57
mW/°C
RθJA Thermal Resistance Junction to Ambient 635 °C/W
TJ, Tstg
Junction and Storage Temperature
150 °C
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse BreakdownVoltage
V(BR)R
(IR = 10 µAdc)
Reverse Voltage Leakage Current
IR
(VR = 15 Vdc)
Min
20
—
Typ
—
—
Max
—
50
Unit
Vdc
nAdc
Ct, Diode Capacitance
Q, Figure of Merit
VR = 2.0 Vdc, f = 1.0 MHz
VR = 3.0 Vdc
pF f = 500 MHz
Device
Min Nom Max
Min
MMVL809T1
4.5 5.3 6.1
75
1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz(1)
Min Max
1.8 2.6
MMVL809T1–1/2
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