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PDF MMVL109T1 Data sheet ( Hoja de datos )
| Número de pieza | MMVL109T1 | |
| Descripción | Silicon Epicap Diode | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechnaical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Device Marking: 4A
Device
MMVL109T1
ORDERING INFORMATION
Package
Shipping
SOD–323
3000 / Tape & Reel
MMVL109T1
26–32 pF
VOLTAGEVARIABLE
CAPACITANCEDIODES
1
2
PLASTIC, CASE 477
SOD– 323
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMALCHARACTERISTICS
30 Vdc
200 mAdc
Symbol
Characteristic
Max
Unit
PD Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ, Tstg Junction and Storage Temperature Range
*FR–5 Minimum Pad
200
1.57
635
-55 to +150
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
30 —
——
— 300
Max
—
0.1
Unit
Vdc
µAdc
— ppm/°C
Ct, Diode Capacitance
Q, Figure of Merit
VR = 3.0 Vdc, f = 1.0 MHz
VR = 3.0 Vdc
pF f = 50 MHz
Device
Min Nom Max
Min
MMVL109T1
26 29 32
200
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz(Note 1)
Min Max
5.0 6.5
MMVL109T1–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMVL109T1.PDF ] | |
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