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PDF MMVL2101T1 Data sheet ( Hoja de datos )
| Número de pieza | MMVL2101T1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | LRC | |
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning and
AFC, general frequency control and tuning applications.They provide
solid–state reliability in replacement of mechanical tuning methods.
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance – 10%
• Complete Typical Design Curves
• Device Marking: 4G
ORDERING INFORMATION
Device
Package
Shipping
MMVL2101T1 SOD–323
3000 / Tape & Reel
MMVL2101T1
30 VOLTS
VOLTAGEVARIABLE
CAPACITANCEDIODE
1
2
PLASTIC, CASE 477
SOD– 323
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMALCHARACTERISTICS
30 Vdc
200 mAdc
Symbol
Characteristic
Max
Unit
PD Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ, Tstg
Junction and Storage Temperature
*FR–4 Minimum Pad
200 mW
1.57 mW/°C
635 °C/W
150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
30 —
——
— 280
Max
—
0.1
Unit
Vdc
µAdc
— ppm/°C
Device
MMVL2101T1
Ct, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
6.1 6.8 7.5450
Q, Figure of Merit
VR = 4.0 Vdc
f = 50 MHz
Min
2.5
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min Max
2.7 3.2
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0
MHz using a capacitance bridge
(Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0
Vdc divided by CT measured at 30 Vdc.
PARAMETER TEST METHODS
3. Q, FIGURE OF MERIT
4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
Q is calculated by taking the G and C
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
readings of an admittance bridge at the
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
specified frequency and substituting in the 1.0 MHz, TA = +85°C in the following equation, which
following equations:
Q =2πfC/G
(Boonton Electronics Model 33AS8 or
defines TCC:
TCC = CT(+85°C) – CT(–65°C) • 106
85+65
CT(25°C)
equivalent). Use Lead Length = 1/16”.
Accuracy limited by measurement of CT to ±0.1 pF.
MMVL2101T1–1/2
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