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부품번호 | DIM600DCM17-A000 기능 |
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기능 | Igbt Chopper Module | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
www.DataSheet4U.com
DIM600DCM17-A000
Replaces issue March 2002, version DS5491-2.0
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM600DCM17-A000
IGBT Chopper Module
DS5491-3.1 Octtober 2002
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
600A
IC(PK)
(max)
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Choppers
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual, single and bi-directional switch configurations
covering voltages from 600V to 3300V and currents up to 2400A.
The DIM600DCM17-A000 is a 1700V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DCM17-A000
Note: When ordering, please use the whole part number.
5(E1)
6(G1)
7(C1)
1(E1)
3(C1)
2(C2)
4(E2)
Fig. 1 Chopper circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/11
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I Collector cut-off current
CES
IGES
VGE(TH)
V†
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF Diode forward current
IFM Diode maximum forward current
VF† Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
V
GE
=
±20V,
V
CE
=
0V
IC = 30mA, VGE = VCE
VGE = 15V, IC = 600A
VGE = 15V, IC = 600A, , Tcase = 125˚C
DC
tp = 1ms
IF = 600A
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 600A, Tcase = 125˚C
Cies
Cres
LM
R
INT
SCData
Input capacitance
Reverse transfer capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
VCE = 25V, VGE = 0V, f = 1MHz
V = 25V, V = 0V, f = 1MHz
CE GE
-
-
Tj = 125˚C, VCC = 1000V,
I1
t
p
≤
10µs,
V
CE(max)
=
V
CES
–
L*.
di/dt
I
2
IEC 60747-9
Note:
† Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
Min. Typ. Max. Units
- - 1 mA
- - 20 mA
- - 4 µA
4.5 5.5 6.5 V
-
2.7 3.2
V
-
3.4 4.0
V
- - 600 A
- - 1200 A
-
2.0 2.3
V
-
2.0 2.3
V
-
2.1 2.4
V
-
2.1 2.4
V
- 45 - nF
- 3.8 - nF
- 20 - nH
- 0.27 - mΩ
2780
-
A
2400
-
A
4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
4페이지 www.DataSheet4U.com
DIM600DCM17-A000
TYPICAL CHARACTERISTICS
1200
Common emitter.
1100 Tcase = 25˚C
Vce is measured at power busbars
1000 and not the auxiliary terminals
900
800
700
600
500
400
300
200
100
0
0 0.5
VGE = 20V
15V
12V
10V
1 1.5 2 2.5 3 3.5 4 4.5
Collector-emitter voltage, Vce - (V)
5
Fig. 3 Typical output characteristics
1200
1100
1000
Common emitter.
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
900
800
700
600
500
400
300
200 VGE = 20V
15V
100 12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
450
Conditions:
400
Vce = 900V
Tc = 125°C
Rg = 2.2Ω
350
300
250
200
150
100
50
0
0
Eon
Eoff
Erec
200 400 600 800
Collector current, IC - (A)
1000
Fig. 5 Typical switching energy vs collector current
800
Conditions:
Vce = 900V
IC = 600A
Tc = 125°C
600
400
200
Eon
Eoff
Erec
0
0 2 4 6 8 10 12
Gate Resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/11
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DIM600DCM17-A000 | IGBT Chopper Module | Dynex |
DIM600DCM17-A000 | Igbt Chopper Module | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |