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PDF DIM600NSM45-F0000 Data sheet ( Hoja de datos )
| Número de pieza | DIM600NSM45-F0000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Lead Free construction
• Isolated MMC Base with AlN Substrates
• High Thermal Cycling Capability
DIM600NSM45-F000
Single Switch IGBT Module
DS5873-1.1 February 2006 (LN24464)
KEY PARAMETERS
V CES
4500V
V CE(sat) *
(typ) 2.9 V
I C (max) 600A
I C(PK)
(max) 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
• High Reliability Inverters
• Motor Controllers
• Traction Drives
• Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM600NSM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600NSM45-F000
Note: When ordering, please use the complete part number
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DIM600NSM45-F000
1200
1000
Common emitter
Tcase = 25°C
VCE is measured at power busbars
and not the auxiliary terminals
800
600
400 Vge=10V
Vge=12V
Vge=15V
Vge=20V
200
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
4.5
Fig. 3 Typical output characteristics
3000
2000
Conditions:
VCC = 2250V
Tcase = 125°C
Rg = 4.7Ohms
Cge =110nH
Vge =+/- 15V
Eon (mJ)
Eoff (mJ)
Erec (mJ)
1000
0
0 200 400 600
Collector Current - Ic (A)
Fig.5 Typical switching energy vs collector current
1200
1000
Common emitter
Tcase = 125°C
VCE is measured at power busbars
and not the auxiliary terminals
800
600
400 Vge=10V
Vge=12V
Vge=15V
Vge=20V
200
0
0.0
1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
5.0
Fig. 4 Typical output characteristics
8000
7000
6000
Conditions:
VCC = 2250V
Ic = 600A
Tcase = 125°C
Cge =110nH
Vge = +/- 15V
5000
4000
3000
Eon (mJ)
Eoff (mJ)
Erec (mJ)
2000
1000
0
0 5 10 15 20 25 30
Gate Resistance - Rg (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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| PDF Descargar | [ Datasheet DIM600NSM45-F0000.PDF ] | |
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