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DIM600DDM17-A000 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DIM600DDM17-A000은 전자 산업 및 응용 분야에서
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부품번호 DIM600DDM17-A000 기능
기능 Dual Switch IGBT Module
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DIM600DDM17-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
. DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 September 2005 (LN24180)
FEATURES
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated AlSiC Baseplate with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
High Power Inverters
Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM600DDM17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This module is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DDM17-A000
Note: When ordering, please use the whole part number.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000 pdf, 반도체, 판매, 대치품
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SEMICONDUCTOR
DIM600DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Ices Collector cut-off current
VGE = 0V, VCE = VCES
- - 1 mA
VGE = 0V, VCE = VCES, Tcase = 125°C
-
- 20 mA
Ices Gate leakage current
VGE = ±20V, VCE = 0V
- - 4 µA
VGE(TH) Gate threshold voltage
IC = 30mA, VGE = VCE
4.5 5.5 6.5 V
VCE(sat)€ Collector-emitter saturation voltage VGE = 15V, IC = 600A
- 2.7 3.2 V
VGE = 15V, IC = 600A, Tcase = 125°C
-
3.4 4.0 V
IF Diode forward current
DC
- - 600 A
IFM Diode maximum forward current
tp = 1ms
- - 1200 A
VF€ Diode forward voltage
IF = 600A
- 2.0 2.3 V
IF = 600A, Tcase = 125°C
- 2.1 2.4 V
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
- 45 - nF
LM Module inductance -per arm
- - 3.8 - nH
RINT Internal resistance –per arm
- - 0.27 - m
SCData Short circuit. Isc
Tj = 125°C, V cc = 1000V,
tp 10µs,
VCE(max) = VCES - L*×di/dt
IEC 60747-9
I1 - 2780 -
I2 - 2400 -
A
A
Note:
€ Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM600DDM17-A000 전자부품, 판매, 대치품
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SEMICONDUCTOR
DIM600DDM17-A000
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
100
Z(t) IGBT
Z(t) Antiparallel Diode
10
Fig.9 Diode reverse bias safe operating area
1
0.001
0.01 0.1
1
Pulse width, tp - (s)
10
i 123
Ri IGBT °C/kW
0.584 3.229 12.180
τi IGBT ms
0.109 3.136 45.600
Ri DIODE °C/kW
0.935 5.266 15.467
τi DIODE ms
0.099 3.206 38.583
Fig.10 Transient thermal impedance
4
8.202
143.022
18.757
113.969
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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관련 데이터시트

부품번호상세설명 및 기능제조사
DIM600DDM17-A000

Dual Switch IGBT Module

Dynex Semiconductor
Dynex Semiconductor

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