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DIM600BSS12-A000 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DIM600BSS12-A000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 DIM600BSS12-A000 기능
기능 Single Switch IGBT Module
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DIM600BSS12-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM600BSS12-A000
DIM600BSS12-A000
Single Switch IGBT Module
Replaces February 2004 version, issue PDS5692-2.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Inverters
I Motor Controllers
DS5692-3.0 June 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
600A
IC(PK)
(max)
1200A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-A000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600BSS12-A000
Note: When ordering, please use the whole part number.
Outline type code: B
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9




DIM600BSS12-A000 pdf, 반도체, 판매, 대치품
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DIM600BSS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I Collector cut-off current
CES
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
IGES Gate leakage current
V
GE
=
±20V,
V
CE
=
0V
VGE(TH)
Gate threshold voltage
IC = 30mA, VGE = VCE
V Collector-emitter saturation voltage
CE(sat)
VGE = 15V, IC = 600A
VGE = 15V, IC = 600A, , Tcase = 125˚C
IF Diode forward current
DC
IFM Diode maximum forward current
tp = 1ms
VF† Diode forward voltage
IF = 600A
IF = 600A, Tcase = 125˚C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
L Module inductance
M
-
RINT Internal transistor resistance
-
SCData
Short circuit. I
SC
T = 125˚C, V = 900V,
j CC
I
1
tp 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
L* is the circuit inductance + LM
Min. Typ. Max. Units
- - 1 mA
- - 12 mA
- - 2 µA
4.5 5.5 6.5 V
-
2.2 2.7
V
-
2.6 3.1
V
- - 600 A
- - 1200 A
-
2.2 2.5
V
-
2.3 2.6
V
- 100 - nF
- 20 - nH
- 0.23 - m
- 4100 -
A
- 3400 -
A
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM600BSS12-A000 전자부품, 판매, 대치품
www.DataSheet4U.com
DIM600BSS12-A000
1200
1000
Tj = 25˚C
Tj = 125˚C
VF is measured at power busbars
and not the auxiliary terminals
800
600
400
200
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
4.0
700
Tcase =125˚C
600
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge =15V
200 Rg = 2.2 Ohms
Module IC
Chip IC
0
0 200 400 600 800 1000 1200
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
1400
100
Diode
Transistor
500
10
400
300
200
100
0
0 200 400 600 800 1000 1200
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
1400
1
0.1
0.001
IGBT
Diode
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
1
0.7
0.11
1.49
0.10
23
3.87 14.61
3.14 45.60
8.42 24.74
3.21 38.58
0.01 0.1
Pulse width, tp - (s)
1
Fig. 10 Transient thermal impedance
4
9.84
143.02
30.01
113.97
10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
DIM600BSS12-A000

Single Switch IGBT Module

Dynex Semiconductor
Dynex Semiconductor

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