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부품번호 | DIM200MKS12-A000 기능 |
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기능 | Igbt Modules - Chopper | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
www.DataSheet4U.com
Replaces November 2002, issue DS5552-1.2
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
DIM200MKS12-A000
DIM200MKS12-A000
IGBT Chopper Module
DS5552-1.2 November 2002
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
1(K,E)
2(A)
3(C)
9(C1)
4(G1)
5(E1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MKS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The module incorporates a high current rated
freewheel diode. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MKS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Chopper circuit diagram - upper arm controlled
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
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DIM200MKS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
I Collector cut-off current
CES
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
IGES Gate leakage current
V
GE
=
±20V,
V
CE
=
0V
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
V † Collector-emitter saturation voltage
CE(sat)
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, , Tcase = 125˚C
IF Diode forward current
DC
IFM Diode maximum forward current
tp = 1ms
VF† Diode forward voltage
IF = 200A
(Antiparallel and freewheel diode)
IF = 200A, Tcase = 125˚C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
L Module inductance - per arm
M
-
RINT Internal transistor resistance - per arm
-
SCData
Short circuit. I
SC
T = 125˚C, V = 900V,
j CC
I
1
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
† Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + LM
Min. Typ. Max. Units
- - 0.25 mA
- - 6 mA
- - 1 µA
4.5 5.5 6.5 V
-
2.2 2.7
V
-
2.6 3.1
V
- - 200 A
- - 400 A
-
2.1 2.4
V
-
2.1 2.4
V
- 23 - nF
- 30 - nH
- 0.27 - mΩ
- 1375 -
A
- 1125 -
A
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200MKS12-A000
400
Tj = 25˚C
Tj = 125˚C
350 VF is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3.5
175
Tcase =125˚C
150
125
100
450
Module IC
Chip IC
400
350
300
250
200
150
100
50 Tcase = 125˚C
Vge = 15V
Rg = 4.7 Ohms
0
0 200 400 600 800 1000 1200
Collector emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
1400
1000
Diode
100 Transistor
75
50
25
0
0 200 400 600 800 1000 1200
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
1400
10
1
0.001
12
IGBT Ri (˚C/KW) 2.10 11.62
τi (ms)
0.11 3.14
Diode Ri (˚C/KW) 4.49 25.28
τi (ms)
0.10 3.21
0.01 0.1
Pulse width, tp - (s)
3
43.85
45.60
74.24
38.58
1
Fig. 10 Transient thermal impedance
4
29.53
143.02
90.03
113.97
10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/10
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DIM200MKS12-A000 | Igbt Modules - Chopper | Dynex Semiconductor |
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