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부품번호 | DIM200PKM33-F000 기능 |
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기능 | IGBT Chopper Module | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
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DIM200PKM33-F000
IGBT Chopper Module
DS5465- 1.0 September 2005 (LN24183)
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Isolated AlSiC Base with AlN substrates
• High thermal cycling capability
APPLICATIONS
• Choppers
• Motor Controllers
• Power Supplies
• Traction Auxiliaries
KEY PARAMETERS
VCES
VCE
*
(sat)
(typ)
IC
IC(PK)
(max)
(max)
3300V
2.8V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PKM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the upper
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Fig. 1 Chopper circuit diagram
Order As:
DIM200PKM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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SEMICONDUCTOR
DIM200PKM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
AIN
AlSiC
33mm
20mm
175
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Rth(j-c) Thermal resistance - transistor
Continuous dissipation – - - 48 °C/kW
junction to case
Thermal resistance – diode (IGBT
Rth(j-c)
arm)
Continuous dissipation – - - 96 °C/kW
Thermal resistance- diode ( Diode
junction to case
arm)
96 °C/kW
Rth(c-h)
Thermal resistance – case to heatsink Mounting torque 5Nm
(per module)
(with mounting grease)
- - 16 °C/kW
Tj Junction temperature
Transistor
- - 150 °C
Diode
- - 125 °C
Tstg Storage temperature range
- -40 - 125 °C
- Screw torque
Mounting – M6
- - 5 Nm
Electrical connections – M5 - - 4 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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SEMICONDUCTOR
DIM200PKM33-F000
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7/10
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DIM200PKM33-F000 | IGBT Chopper Module | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |