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DIM200PKM33-F000 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DIM200PKM33-F000은 전자 산업 및 응용 분야에서
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부품번호 DIM200PKM33-F000 기능
기능 IGBT Chopper Module
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DIM200PKM33-F000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM200PKM33-F000
IGBT Chopper Module
DS5465- 1.0 September 2005 (LN24183)
FEATURES
10µs Short Circuit Withstand
Soft Punch Through Silicon
Isolated AlSiC Base with AlN substrates
High thermal cycling capability
APPLICATIONS
Choppers
Motor Controllers
Power Supplies
Traction Auxiliaries
KEY PARAMETERS
VCES
VCE
*
(sat)
(typ)
IC
IC(PK)
(max)
(max)
3300V
2.8V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PKM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the upper
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Fig. 1 Chopper circuit diagram
Order As:
DIM200PKM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PKM33-F000 pdf, 반도체, 판매, 대치품
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SEMICONDUCTOR
DIM200PKM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
AIN
AlSiC
33mm
20mm
175
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Rth(j-c) Thermal resistance - transistor
Continuous dissipation – - - 48 °C/kW
junction to case
Thermal resistance – diode (IGBT
Rth(j-c)
arm)
Continuous dissipation – - - 96 °C/kW
Thermal resistance- diode ( Diode
junction to case
arm)
96 °C/kW
Rth(c-h)
Thermal resistance – case to heatsink Mounting torque 5Nm
(per module)
(with mounting grease)
- - 16 °C/kW
Tj Junction temperature
Transistor
- - 150 °C
Diode
- - 125 °C
Tstg Storage temperature range
- -40 - 125 °C
- Screw torque
Mounting – M6
- - 5 Nm
Electrical connections – M5 - - 4 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM200PKM33-F000 전자부품, 판매, 대치품
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SEMICONDUCTOR
DIM200PKM33-F000
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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-----------------------------------------------------------------------

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관련 데이터시트

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DIM200PKM33-F000

IGBT Chopper Module

Dynex Semiconductor
Dynex Semiconductor

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