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PDF DIM200WKS17-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200WKS17-A000 | |
| Descripción | IGBT Chopper Module - Upper Arm Control | |
| Fabricantes | Dynex Semiconductor | |
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DIM200WKS17-A000
DIM200WKS17-A000
IGBT Chopper Module - Upper Arm Control
FDS5699-1.1 December 2003
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WKS17-A000 is a 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As:
DIM200WKS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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DIM200WKS17-A000
TYPICAL CHARACTERISTICS
400
Common emitter.
Tcase = 25˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
50
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
400
Common emitter.
Tcase = 125˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 20V
50 15V
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
80
Conditions:
Tc = 125˚C,
70 Rg = 4.7 ,
Vcc = 900V
60
50
40
30
20
10 Eon
Eoff
Erec
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
120
Conditions:
Tc = 125˚C,
IC = 200A,
100 Vcc = 900V
80
60
40
20 Eon
Eoff
Erec
0
4 5 6 7 8 9 10
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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