|
|
|
부품번호 | DIM200WLS12-A000 기능 |
|
|
기능 | IGBT Chopper Module - Upper Arm Control | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
www.DataSheet4U.com
DIM200WLS12-A000
DIM200WLS12-A000
IGBT Chopper Module - Lower Arm Control
Replaces February 2004 version, issue FDS5697-2.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
FDS5697-3.0 June 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(Measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As:
DIM200WLS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/8
www.DataSheet4U.com
DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 200A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 70nH
IF = 200A, VR = 600V,
dIF/dt = 2300A/µs
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 200A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 4.7Ω
L ~ 70nH
I = 200A, V = 600V,
FR
dIF/dt = 2000A/µs
Min. Typ. Max. Units
- 600 - ns
- 50 - ns
- 20 - mJ
- 240 - ns
- 95 - ns
- 25 - mJ
- 2 - µC
- 30 - µC
- 150 -
A
- 13 - mJ
Min. Typ. Max. Units
- 800 - ns
- 70 - ns
- 27 - mJ
- 385 - ns
- 110 - ns
- 40 - mJ
- 50 - µC
- 160 -
A
- 20 - mJ
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
4페이지 www.DataSheet4U.com
DIM200WLS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
Nominal weight: 420g
Module outline type code: W
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ DIM200WLS12-A000.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DIM200WLS12-A000 | IGBT Chopper Module - Upper Arm Control | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |