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DIM200WLS12-A000 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DIM200WLS12-A000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 DIM200WLS12-A000 자료 제공

부품번호 DIM200WLS12-A000 기능
기능 IGBT Chopper Module - Upper Arm Control
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DIM200WLS12-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM200WLS12-A000
DIM200WLS12-A000
IGBT Chopper Module - Lower Arm Control
Replaces February 2004 version, issue FDS5697-2.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
FDS5697-3.0 June 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(Measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As:
DIM200WLS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/8




DIM200WLS12-A000 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 200A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7
L ~ 70nH
IF = 200A, VR = 600V,
dIF/dt = 2300A/µs
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 200A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 4.7
L ~ 70nH
I = 200A, V = 600V,
FR
dIF/dt = 2000A/µs
Min. Typ. Max. Units
- 600 - ns
- 50 - ns
- 20 - mJ
- 240 - ns
- 95 - ns
- 25 - mJ
- 2 - µC
- 30 - µC
- 150 -
A
- 13 - mJ
Min. Typ. Max. Units
- 800 - ns
- 70 - ns
- 27 - mJ
- 385 - ns
- 110 - ns
- 40 - mJ
- 50 - µC
- 160 -
A
- 20 - mJ
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM200WLS12-A000 전자부품, 판매, 대치품
www.DataSheet4U.com
DIM200WLS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
Nominal weight: 420g
Module outline type code: W
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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부품번호상세설명 및 기능제조사
DIM200WLS12-A000

IGBT Chopper Module - Upper Arm Control

Dynex Semiconductor
Dynex Semiconductor

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