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PDF DIM200WBS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200WBS12-A000 | |
| Descripción | IGBT Chopper Module - Upper Arm Control | |
| Fabricantes | Dynex Semiconductor | |
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FEATURES
• 10 µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• Lead Free construction
APPLICATIONS
• Matrix Converters
• Brushless Motor Controllers
• Frequency Converters
DIM200WBS12-A000
Single Switch IGBT Module
DS5862-1.2 March 2006 (LN24533)
KEY PARAMETERS
VCES
VT
IC
(typ)
(max)
IC(PK)
(max)
± 1200V
4.3 V
200A
400A
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM200WBS12-A000 is a bi-directional 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WBS12-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Half bridge circuit diagram
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EO
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200WBS12-A000
Test Conditions
IC = 200A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7 Ω
L ∼ 100nH
IF = 200A, VR = 600V,
dlF/dt = 2100A/µs
Min. Typ. Max. Units
- 600 - ns
- 50 - ns
- 20 - mJ
- 240 - ns
- 95 - ns
- 25 - mJ
- 2 - µC
- 30 - µC
- 125 - A
- 13 - mJ
Test Conditions
IC = 200A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7 Ω
L ∼ 100nH
IF = 200A, VR = 600V,
dlF/dt = 1900A/µs
Min. Typ. Max. Units
- 800 - ns
- 70 - ns
- 27 - mJ
- 385 - ns
- 110 - ns
- 40 - mJ
- 50 - µC
- 140 - A
- 20 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM200WBS12-A000.PDF ] | |
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