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부품번호 | NID5004N 기능 |
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기능 | Self-Protected FET | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
NID5004N
Self−Protected FET
with Temperature and
Current Limit
40 V, 6.5 A, Single N−Channel, DPAK
Self–protected FETs are a series of power MOSFETs which utilize
ON Semiconductor HDPlust technology. The self–protected
MOSFET incorporates protection features such as integrated thermal
and current limits. The self−protected MOSFETs include an integrated
Drain−to−Gate Clamp that provides overvoltage protection from
transients and avalanche. The device is protected from Electrostatic
Discharge (ESD) by utilizing an integrated Gate−to−Source Clamp.
Features
• Short Circuit Protection
• In Rush Current Limit
• Thermal Shutdown with Automatic Restart
• Avalanche Rated
• Overvoltage Protection
• ESD Protection (4 kV HBM)
• Controlled Slew Rate for Low Noise Switching
• AEC Q101 Qualified
• This is a Pb−Free Device
Applications
• Solenoid Driver
• Relay Driver
• Small Motors
• Lighting
• Relay Replacement
• Load Switching
http://onsemi.com
VDSS
(Clamped)
40 V
RDS(on) Typ
110 mW @ 10 V
ID Typ
(Limited)
6.5 A
Drain
Gate
Input
Overvoltage
RG Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
DPAK
CASE 369C
STYLE 2
Source
MARKING
DIAGRAM
1 YYW
2 D5
3 004NG
D5004N = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping†
NID5004NT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 1
1
Publication Order Number:
NID5004N/D
NID5004N
TYPICAL PERFORMANCE CURVES
12 6
TJ = 25°C
TJ = −55°C
10
5.0 V
5
8
10 V
4
TJ = 25°C
TJ = 100°C
6
4.0 V
3
4
3.5 V
2
2 VGS = 3.0 V
0
0 5.0 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1
0
0 1 2 3 45
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.15
0.14
ID = 2 A
TJ = 25°C
0.15
0.14
TJ = 25°C
0.13
0.12
0.13
0.12
VGS = 5 V
0.11
0.10
3.0 4.0
5.0 6.0
7.0 8.0 9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.11
VGS = 10 V
0.10
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current
1.6
1.4
ID = 3.75 A
VGS = 10 V
1.2
1.0
0.8
0.6
0.4
−55
−35 −15 5 25 45 65 85
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1E−03
8E−04
TJ = 100°C
6E−04
4E−04
2E−04
0E+00
0 5.0 10 15 20 25 30 35 40 45
IDSS, LEAKAGE (A)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
NID5004N | Self-Protected FET | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |