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NID5003N 데이터시트 PDF




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부품번호 NID5003N 기능
기능 Single N-Channel DPAK
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NID5003N 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NID5003N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Continuous
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
VDSS
VGS
ID
PD
RqJC
RqJA
RqJA
42 Vdc
"14 Vdc
Internally Limited
W
1.3
2.3
°C/W
3.0
95
54
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 3.2 Apk, L = 120 mH, RG = 25 W)
Operating and Storage Temperature Range
(Note 3)
EAS
TJ, Tstg
600
−55 to
150
mJ
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted onto minimum pad size (0.412square) FR4 PCB, 1 oz cu.
2. Mounted onto 1square pad size (1.127square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
http://onsemi.com
VDSS
(Clamped)
42 V
RDS(on) TYP
42 mW @ 10 V
ID MAX
(Limited)
20 A*
Drain
Gate
Input
Overvoltage
Protection
RG
ESD Protection
MPWR
Temperature Current Current
Limit
Limit Sense
Source
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAM
1 AYW
2
3 D5003N
D5003N = Device Code
A = Assembly Location
Y = Year
W = Work Week
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping
NID5003NT4
DPAK 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
NID5003N/D




NID5003N pdf, 반도체, 판매, 대치품
NID5003N
TYPICAL PERFORMANCE CURVES
10
VGS = 0 V
TJ = 25°C
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Diode Forward Voltage vs. Current
1
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NID5003N

Single N-Channel DPAK

ON Semiconductor
ON Semiconductor

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