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부품번호 | NUS1204MN 기능 |
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기능 | Overvoltage Protection IC | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
www.DataSheet4U.com
NUS1204MN
Overvoltage Protection IC
with Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP304 overvoltage protection circuit (OVP) with a
−12 V P−Channel power MOSFET. It is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications using an external AC−DC
adapter or a car accessory charger to power a portable product or
recharge its internal batteries. It has a nominal overvoltage threshold
of 4.725 V which makes it ideal for single cell Li−Ion as well as 3/4
cell NiCD/NiMH applications.
Features
• OvervoltageTurn−Off Time of Less Than 20 ms
• Accurate Voltage Threshold of 4.725 V, Nominal
• High Accuracy Undervoltage Threshold of 2.0%
• −12 V Integrated P−Channel Power MOSFET
• Low RDS(on) = 75 mW @ −4.725 V
• Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable
Applications
• Maximum Solder Reflow Temperature @ 260°C
• This device is manufactured with a Pb−Free external lead finish only.
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Portable Computers and PDAs
• Cell Phones and Handheld Products
• Digital Cameras
http://onsemi.com
MARKING
DIAGRAM
WDFN6
1
2
U2 M
6
5
1
CASE 506AN
3G 4
U2 = Specific Device Code
M = Date Code
G = Pb−Free Package
PIN CONNECTIONS
GATE 1
OUT 2
GND 3
8
7
(Top View)
6 DRAIN
5 SOURCE
4 IN
ORDERING INFORMATION
Device
Package
Shipping†
NUS1204MNT1G WDFN6 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
Publication Order Number:
NUS1204MN/D
NUS1204MN
P−CHANNEL MOSFET (TA= 25°C, unless otherwise specified)
Parameter
Symbol
Drain to Source On Resistance
VGS = −4.5 V, ID = 600 mA
VGS = −4.5 V, ID = 1.0 A
RDS(on)
Zero Gate Voltage Drain Current
VGS = −4.5 V, VGS = 0 V, VDS = −10 V
Turn On Delay (Note 4)
VGS = −4.5 V
Turn Off Delay (Note 4)
VGS = −4.5 V
Input Capacitance
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
IDSS
ton
toff
Cin
Gate to Source Leakage Current
VGS = 8.0 V, VDS = 0 V
IGSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
V(BR)DSS
Gate Threshold Voltage
VGS = VDS, ID = −250 mA
V(GS)th
4. Switching characteristics are independent of operating junction temperature.
Min
−12
−0.4
Typ
75
75
5.5
20
531
±10
−0.7
Max Units
mW
100
100
mA
−1.0
ns
ns
pF
nA
V
V
−1.0
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NUS1204MN | Overvoltage Protection IC | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |