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NUS1204MN 데이터시트 PDF




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기능 Overvoltage Protection IC
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NUS1204MN 데이터시트, 핀배열, 회로
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NUS1204MN
Overvoltage Protection IC
with Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP304 overvoltage protection circuit (OVP) with a
−12 V P−Channel power MOSFET. It is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications using an external AC−DC
adapter or a car accessory charger to power a portable product or
recharge its internal batteries. It has a nominal overvoltage threshold
of 4.725 V which makes it ideal for single cell Li−Ion as well as 3/4
cell NiCD/NiMH applications.
Features
OvervoltageTurn−Off Time of Less Than 20 ms
Accurate Voltage Threshold of 4.725 V, Nominal
High Accuracy Undervoltage Threshold of 2.0%
−12 V Integrated P−Channel Power MOSFET
Low RDS(on) = 75 mW @ −4.725 V
Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable
Applications
Maximum Solder Reflow Temperature @ 260°C
This device is manufactured with a Pb−Free external lead finish only.
Benefits
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Applications
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
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MARKING
DIAGRAM
WDFN6
1
2
U2 M
6
5
1
CASE 506AN
3G 4
U2 = Specific Device Code
M = Date Code
G = Pb−Free Package
PIN CONNECTIONS
GATE 1
OUT 2
GND 3
8
7
(Top View)
6 DRAIN
5 SOURCE
4 IN
ORDERING INFORMATION
Device
Package
Shipping
NUS1204MNT1G WDFN6 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
Publication Order Number:
NUS1204MN/D




NUS1204MN pdf, 반도체, 판매, 대치품
NUS1204MN
P−CHANNEL MOSFET (TA= 25°C, unless otherwise specified)
Parameter
Symbol
Drain to Source On Resistance
VGS = −4.5 V, ID = 600 mA
VGS = −4.5 V, ID = 1.0 A
RDS(on)
Zero Gate Voltage Drain Current
VGS = −4.5 V, VGS = 0 V, VDS = −10 V
Turn On Delay (Note 4)
VGS = −4.5 V
Turn Off Delay (Note 4)
VGS = −4.5 V
Input Capacitance
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
IDSS
ton
toff
Cin
Gate to Source Leakage Current
VGS = 8.0 V, VDS = 0 V
IGSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
V(BR)DSS
Gate Threshold Voltage
VGS = VDS, ID = −250 mA
V(GS)th
4. Switching characteristics are independent of operating junction temperature.
Min
−12
−0.4
Typ
75
75
5.5
20
531
±10
−0.7
Max Units
mW
100
100
mA
−1.0
ns
ns
pF
nA
V
V
−1.0
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NUS1204MN

Overvoltage Protection IC

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