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PDF NUS3045MN Data sheet ( Hoja de datos )
| Número de pieza | NUS3045MN | |
| Descripción | (NUS2045MN / NUS3045MN) Overvoltage Protection IC | |
| Fabricantes | ON Semiconductor | |
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NUS2045MN, NUS3045MN
Overvoltage Protection IC
with Integrated MOSFET
These devices represent a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
20 V P−channel power MOSFET (NUS2045MN) or with a 30 V
P−channel power MOSFET (NUS3045MN). They are specifically
designed to protect sensitive electronic circuitry from overvoltage
transients and power supply faults. During such hazardous events, the
IC quickly disconnects the input supply from the load, thus protecting
the load before any damage can occur.
The OVP ICs are optimized for applications using an external
AC−DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. They have a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell Li−Ion as
well as 3/4 cell NiCD/NiMH applications.
Features
• OvervoltageTurn−Off Time of Less Than 1.0 ms
• Accurate Voltage Threshold of 6.85 V, Nominal
• Undervoltage Lockout Protection; 2.8 V, Nominal
• Control Input Compatible with 1.8 V Logic Levels
• −20 V or −30 V Integrated P−Channel Power MOSFET
• Low RDS(on) = 71 mW @ −4.5 V for NUS2045MN
Low RDS(on) = 66 mW @ −4.5 V for NUS3045MN
• Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
• Maximum Solder Reflow temperature @ 235°C for MNT1 suffix and
260°C for MNT1G suffix
• Pb−Free Packages are Available
http://onsemi.com
8
1
DFN8
CASE 506AL
MARKING DIAGRAM
1 x045
AYWWG
G
x045 = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
VCC 8
OUT 7
GATE 6
SRC 5
GND
10
DRAIN
9
1 IN
2 GND
3 CNTRL
4 DRAIN
(Bottom View)
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Portable Computers and PDAs
• Cell Phones and Handheld Products
• Digital Cameras
ORDERING INFORMATION
Device
Package
Shipping†
NUS2045MNT1
DFN8 3000 Tape & Reel
NUS2045MNT1G DFN8 3000 Tape & Reel
(Pb−Free)
NUS3045MNT1
DFN8 3000 Tape & Reel
NUS3045MNT1G DFN8 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
Publication Order Number:
NUS2045MN/D
1 page  
NUS2045MN, NUS3045MN
P−CHANNEL MOSFET
Parameter
Symbol
Drain to Source On Resistance
VGS = −4.5 V, ID = 600 mA
VGS = −4.5 V, ID = 1.0 A
VGS = −4.5 V, ID = 600 mA
VGS = −4.5 V, ID = 1.0 A
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = −16 V
VGS = 0 V, VDS = −24 V
Turn On Delay (Note 4)
VGS = −4.5 V
VGS = −4.5 V
Turn Off Delay (Note 4)
VGS = −4.5 V
VGS = −4.5 V
Input Capacitance (Note 3)
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
VGS = 0 V, f = 1.0 MHz, VDS = −15 V
Gate to Source Leakage Current
VGS = ±8.0 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
NUS2045MN
NUS2045MN
NUS3045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
RDS(on)
IDSS
ton
toff
Cin
IGSS
V(BR)DSS
Gate Threshold Voltage
VGS = VDS, ID = −250 mA
NUS2045MN
NUS3045MN
V(GS)th
4. Switching characteristics are independent of operating junction temperature.
Min
20
30
−1.2
−3.0
Typ
71
71
66
66
7.5
11
30.2
28
675
750
±10
±10
Max Units
mW
95
95
110
110
mA
−1.0
−1.0
ns
ns
pF
nA
V
V
−0.4
−1.0
http://onsemi.com
5
5 Page 
NUS2045MN, NUS3045MN
CNTR signal
TON CT
Input Voltage
Output Voltage
TON CT Test
TA=25°C
Figure 16. TON CT Waveforms
CNTR signal
TOFF CT
Input Voltage
TOFF CT Test
TA=25°C
Output Voltage
Figure 17. TOFF CT Waveforms
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NUS3045MN.PDF ] | |
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