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부품번호 | P6SMB11CAT3 기능 |
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기능 | (P6SMBxxCAT3) 600 Watt Peak Power Zener Transient Voltage Suppressors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
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www.DataSheet4U.com
P6SMB11CAT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Features
• Working Peak Reverse Voltage Range − 9.4 to 77.8 V
• Standard Zener Breakdown Voltage Range − 11 to 91 V
• Peak Power − 600 W @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH: All External Surfaces are Corrosion Resistant and Leads are
Readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend Providing More Contact Area to Bond Pads
POLARITY: Polarity Band Will Not be Indicated
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL = 25°C,
Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
PD
RqJL
3.0 W
40 mW/°C
25 °C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
0.55 W
4.4 mW/°C
226 °C/W
Operating and Storage Temperature Range
TJ, Tstg −65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 8
1
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.4−78 VOLTS
600 WATT PEAK POWER
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
xxC G
G
xxC = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
P6SMBxxCAT3
SMB 2500/Tape & Reel
P6SMBxxCAT3G SMB 2500/Tape & Reel
(Pb−Free)
The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Publication Order Number:
P6SMB11CAT3/D
P6SMB11CAT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25°C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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P6SMB11CAT3 | (P6SMBxxCAT3) 600 Watt Peak Power Zener Transient Voltage Suppressors | ON Semiconductor |
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