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BUK7905-40AIE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7905-40AIE
기능 (BUK7105-40AIE / BUK7905-40AIE) TrenchPLUS standard level FET
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BUK7905-40AIE 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK71/7905-40AIE
TrenchPLUS standard level FET
Rev. 04 — 6 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
1.2 Features
s ESD protection
s Integrated current sensor
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V
s ID 155 A
s RDSon = 4.5 m(typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 Isense (Is)
3 drain (d)
mb
mb
4 Kelvin source
5 source (s)
12 345
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220)
Symbol
d
g
MBL368
s
Isense
Kelvin source




BUK7905-40AIE pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK71/7905-40AIE
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient vertical in still air
SOT263B
SOT426
minimum footprint; mounted on a
printed-circuit board
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
5.1 Transient thermal impedance
Min Typ Max Unit
- 60 - K/W
- 50 - K/W
- - 0.55 K/W
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12341
Product data
Rev. 04 — 6 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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BUK7905-40AIE 전자부품, 판매, 대치품
Philips Semiconductors
BUK71/7905-40AIE
TrenchPLUS standard level FET
400
ID
(A) 10
300 20
8 7.5
200
100
0
024
03ni86
Label is VGS (V)
7
6.5
6
5.5
5
4.5
4
6 8 10
VDS (V)
12
RDSon
(m)
8
03ni88
4
0
4 8 12 16 VGS (V) 20
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
RDSon
(m)
15
VGS = 5.5 V 6 V
6.5 V 7 V
03ni87
10
5
0
0
8V
10 V
20 V
100 200 300 ID (A) 400
03ni30
2
a
1.6
1.2
0.8
0.4
0
-60
0
60 120 Tj (°C) 180
Tj = 25 °C; tp = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12341
Product data
Rev. 04 — 6 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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