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BUK7907-55AIE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7907-55AIE
기능 (BUK7107-55AIE / BUK7907-55AIE) TrenchPLUS standard level FET
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BUK7907-55AIE 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK71/7907-55AIE
TrenchPLUS standard level FET
Rev. 01 — 12 August 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
Product availability:
BUK7107-55AIE in SOT426 (D2-PAK)
BUK7907-55AIE in SOT263B (TO-220AB).
1.2 Features
s Integrated current sensor
s ESD protection
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 55 V
s ID 140 A
s RDSon = 5.8 m(typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 Isense
3 drain (d)
mb
mb
d
4 Kelvin source
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
MBL368
s
Isense
Kelvin source




BUK7907-55AIE pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-a)
thermal resistance from junction to ambient
SOT263B
vertical in still air
- 60 - K/W
SOT426
minimum footprint; mounted on a PCB -
50 - K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
- - 0.55 K/W
4.1 Transient thermal impedance
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni29
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09877
Product data
Rev. 01 — 12 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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BUK7907-55AIE 전자부품, 판매, 대치품
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
400
ID 12
(A)
20
300
10
8.5
200
100
0
024
03ni65
8
VGS (V) = 7.5
7
6.5
6
5.5
4
4.5
6 8 10
VDS (V)
8
RDSon
(m)
7
6
5
4
5
03ni66
10 15 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
12
RDSon
(m)
10
8
6
4
2
VGS (V) = 5.5
03ni67
6
6.5
7
8
10
2
a
1.5
1
0.5
03ne89
0
0 20 40 60 80 100 120
ID (A)
Tj = 25 °C; tp = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09877
Product data
Rev. 01 — 12 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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BUK7907-55AIE

(BUK7107-55AIE / BUK7907-55AIE) TrenchPLUS standard level FET

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