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PDF BUK7907-55AIE Data sheet ( Hoja de datos )
| Número de pieza | BUK7907-55AIE | |
| Descripción | (BUK7107-55AIE / BUK7907-55AIE) TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK71/7907-55AIE
TrenchPLUS standard level FET
Rev. 01 — 12 August 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
Product availability:
BUK7107-55AIE in SOT426 (D2-PAK)
BUK7907-55AIE in SOT263B (TO-220AB).
1.2 Features
s Integrated current sensor
s ESD protection
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS ≤ 55 V
s ID ≤ 140 A
s RDSon = 5.8 mΩ (typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 Isense
3 drain (d)
mb
mb
d
4 Kelvin source
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
MBL368
s
Isense
Kelvin source
1 page  
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25°C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain-source leakage current
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
Tj = 25°C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25°C
Tj = 175 °C
IG = ±1 mA;
−55°C < Tj <175 °C
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A;
Figure 7 and 8
ID/Isense
ratio of drain current to sense
current
Dynamic characteristics
Tj = 25°C
Tj = 175 °C
VGS > 10 V;
−55°C < Tj <175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDS = 44 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
from upper edge of drain
mounting base to center of
die
Ls internal source inductance from source lead to source
bond pad
9397 750 09877
Product data
Rev. 01 — 12 August 2002
Min
55
50
2
1
-
-
-
20
-
-
-
-
450
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--V
--V
34V
--V
- 4.4 V
0.1 10
µA
- 250 µA
22 -
V
22
1000
nA
- 10 µA
5.8 7
mΩ
- 14 mΩ
500 550
116
19
50
4500
960
510
36
115
159
111
2.5
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
7.5 -
nH
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
D1
D
E
p1
∅p
q
A
A1
mounting
base
m
L
L1
L2
15
e b wM
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b c D D1 E e L L1(1) L2(2)
mm
4.5
4.1
1.39 0.85
1.27 0.70
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
1.7
15.0
13.5
2.4
1.6
0.5
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
SOT263B
5-lead TO-220
m
0.8
0.6
∅ p p1 q Q w
3.8
3.6
4.3
4.1
3.0
2.7
2.6
2.2
0.4
EUROPEAN
PROJECTION
ISSUE DATE
01-01-11
Fig 18. SOT263B (TO-220AB).
9397 750 09877
Product data
Rev. 01 — 12 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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