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PDF BUK7108-40AIE Data sheet ( Hoja de datos )
| Número de pieza | BUK7108-40AIE | |
| Descripción | (BUK7108-40AIE / BUK7908-40AIE) TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK71/7908-40AIE
TrenchPLUS standard level FET
Rev. 02 — 24 October 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
1.2 Features
s ESD protection
s Integrated current sensor
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS ≤ 40 V
s ID ≤ 117 A
s RDSon = 6 mΩ (typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 sense current (Isense)
3 drain (d)
mb
mb
d
4 Kelvin source
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
15
MBL263
MBL368
s
Isense
Kelvin source
SOT426 (D2-PAK)
SOT263B (TO-220AB)
1 page  
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain-source leakage current
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IG = ±1 mA;
−55 °C < Tj < 175 °C
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A;
Figure 7 and 8
RD(Is)on
drain-Isense on-state
resistance
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 mA;
Figure 16
ID/Isense
ratio of drain current to sense
current
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS > 10 V; Rsense = 0 Ω;
−55 °C < Tj < 175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VGS = 10 V; VDS = 32 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
Min Typ Max Unit
40 - - V
36 - - V
234V
1- - V
- - 4.4 V
-
0.1 10
µA
- - 250 µA
20 22 -
V
- 22 300 nA
- - 10 µA
- 6 8 mΩ
- - 15.2 mΩ
1.59 1.87 2.20 Ω
3.02 3.55 4.18 Ω
450 500 550
- 78 84 nC
- 14 16 nC
- 34 36 nC
-
2 670
3140
pF
-
900
1053
pF
- 560 653 pF
- 19 - ns
- 76 - ns
- 121 - ns
- 122 - ns
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)
SOT426
E
D1
D
HD
3
1 24 5
eeee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D
max.
D1
E
e Lp HD Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11 1.60 10.30 1.70 2.90 15.80 2.60
1.20 9.70
2.10 14.80 2.20
OUTLINE
VERSION
SOT426
IEC
Fig 18. SOT426 (D2-PAK).
9397 750 12086
Product data
REFERENCES
JEDEC
EIAJ
Rev. 02 — 24 October 2003
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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