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PDF BUK714R1-40BT Data sheet ( Hoja de datos )
| Número de pieza | BUK714R1-40BT | |
| Descripción | (BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D2-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor
s Very low on-state resistance
s Q101 compliant
s 175 °C rated.
1.3 Applications
s Electrical Power Assisted Steering
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s RDSon = 3.4 mΩ (typ)
s VDS ≤ 40 V
s ID ≤ 75 A
s Ptot ≤ 272 W.
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 anode (a)
mb
mb
3 drain (d)
4 cathode (k)
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
03nm72
d
s
a
k
1 page  
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 50 A;
Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VF
temperature sense diode
IF = 1 mA
forward voltage
SF temperature sense diode
temperature coefficient
Dynamic characteristics
IF = 1 mA;
−55 °C < Tj < 175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDD = 32 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of
die SOT263B
from upper edge of drain
mounting base to center of
die SOT426
Min Typ Max Unit
40 - - V
36 - - V
234V
1- - V
- - 4.4 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
-
-
1.58
−2.55
3.4
-
1.60
−2.83
4.1
7.8
1.63
−3.11
mΩ
mΩ
V
mV/K
- 83 - nC
- 18 - nC
- 29 - nC
-
5 106
6 808
pF
-
1 389
1 667
pF
- 527 721 pF
- 38 - ns
- 82 - ns
- 141 - ns
- 90 - ns
- 4.5 - nH
- 3.5 - nH
- 2.5 - nH
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (D2-PAK); 5 leads (one lead cropped)
SOT426
E
D1
D
HD
3
1 24 5
eeee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 b
c
D
max.
D1
E
e Lp HD Q
mm 4.50 1.40 0.85 0.64
4.10 1.27 0.60 0.46
11
1.60 10.30 1.70 2.90 15.80 2.60
1.20 9.70
2.10 14.80 2.20
OUTLINE
VERSION
SOT426
IEC
Fig 18. SOT426 (D2-PAK)
9397 750 13954
Product data
REFERENCES
JEDEC
JEITA
Rev. 01 — 4 November 2004
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
04-10-13
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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