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BUK794R1-40BT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK794R1-40BT
기능 (BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET
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BUK794R1-40BT 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D2-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor
s Very low on-state resistance
s Q101 compliant
s 175 °C rated.
1.3 Applications
s Electrical Power Assisted Steering
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s RDSon = 3.4 m(typ)
s VDS 40 V
s ID 75 A
s Ptot 272 W.
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 anode (a)
mb
mb
3 drain (d)
4 cathode (k)
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
03nm72
d
s
a
k




BUK794R1-40BT pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
Rth(j-a)
thermal resistance from junction to ambient
SOT263B (TO-220AB)
vertical in still air
SOT426 (D2-PAK)
minimum footprint; mounted on a PCB
4.1 Transient thermal impedance
Min Typ Max Unit
- - 0.55 K/W
- - 60 K/W
- - 50 K/W
1
Z th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ni64
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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BUK794R1-40BT 전자부품, 판매, 대치품
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
300
20
ID 10
(A)
7
6.5
200
03nq15
Label is VGS (V)
12
RDSon
(m)
8
03nq17
6
100
5.5
5
4.5
0
0 2 4 6 8 10
VDS (V)
4
0
4 8 12 16 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
RDSon
(mW)
15
03nq16
Lable is VGS (V)
6
6.5
2
a
1.5
03aa27
10 1
7
5
8 10
0.5
20
0
0 100 200 ID (A) 300
0
-60 0 60 120 Tj (°C) 180
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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(BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET

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