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부품번호 | BUK9612-55B 기능 |
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기능 | (BUK9512-55B / BUK9612-55B) logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
BUK95/9612-55B
TrenchMOS™ logic level FET
Rev. 01 — 28 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK9512-55B in SOT78 (TO-220AB)
BUK9612-55B in SOT404 (D2-PAK).
1.2 Features
s Low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 172 mJ
s ID ≤ 75 A
s RDSon = 10.2 mΩ (typ)
s Ptot ≤ 157 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK95/9612-55B
TrenchMOS™ logic level FET
4. Thermal characteristics
Table 3:
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
SOT78 package
SOT404 package
thermal resistance from junction to mounting
base
Conditions
Min
vertical in still air;
-
minimum footprint; mounted on PCB -
Figure 4
-
Typ Max
60 -
50 -
- 0.95
Unit
K/W
K/W
K/W
4.1 Transient thermal impedance
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nn09
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11247
Product data
Rev. 01 — 28 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4 of 15
4페이지 Philips Semiconductors
BUK95/9612-55B
TrenchMOS™ logic level FET
250
ID
(A)
200
Label is VGS (V)
10
8
6
150
100
50
0
024
03nn05
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
6 8 10
VDS (V)
20
RDSon
(mΩ)
15
10
5
3
03nn04
7 11 15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
25
RDSon
(mΩ)
20
3
3.2
3.4
3.6
3.8 4
03nn06
5 10
2
a
1.5
03ne89
15 1
10 0.5
5
0 50 100
Tj = 25 °C; tp = 300µs
Label is VGS (V)
150 200 250
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11247
Product data
Rev. 01 — 28 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK9612-55B | (BUK9512-55B / BUK9612-55B) logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |