|
|
|
부품번호 | PBSS3540E 기능 |
|
|
기능 | PNP low VCEsat (BISS) transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
PBSS3540E
40 V, 500 mA PNP low VCEsat (BISS) transistor
Rev. 01 — 3 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2540E.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
IC = −500 mA;
IB = −50 mA
Min Typ Max
Unit
- - −40 V
- - −500 mA
- - −1 A
[1] -
440 700
mΩ
Philips Semiconductors
PBSS3540E
40 V, 500 mA PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 833 K/W
[2] - - 500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10 0.01
006aaa413
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15062
Product data sheet
Rev. 01 — 3 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 11
4페이지 Philips Semiconductors
PBSS3540E
40 V, 500 mA PNP low VCEsat (BISS) transistor
−1.1
VBEsat
(V)
−0.9
−0.7
−0.5
−0.3
006aaa392
(1)
(2)
(3)
103
RCEsat
(Ω)
102
10
1
006aaa393
(1)
(2)
(3)
−0.1
−10−1
−1
−10
−102
−103
IC (mA)
10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function of
collector current; typical values
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
−1
IC
(A)
−0.8
IB (mA) = −30
−27
−24
−21
−18
−0.6
−0.4
−0.2
006aaa394
−15
−12
−9
−6
−3
103
RCEsat
(Ω)
102
10
1
006aaa395
(1)
(2)
(3)
0
0 −1 −2 −3 −4 −5
VCE (V)
Tamb = 25 °C
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
10−1
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 15062
Product data sheet
Rev. 01 — 3 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 11
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ PBSS3540E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PBSS3540E | PNP low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS3540F | low VCEsat PNP transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |