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PDF PBSS4160DPN Data sheet ( Hoja de datos )
| Número de pieza | PBSS4160DPN | |
| Descripción | NPN/PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Rev. 01 — 3 June 2004
Objective data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency, reduces heat generation
s Reduces printed-circuit board area required.
1.3 Applications
s Power management
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Inductive load drivers (e.g. relays, buzzers and motors)
x Driver in low supply voltage applications (e.g. lamps and LEDs).
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
VCEO
IC
ICRP
RCEsat
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
Min Typ Max
Unit
NPN PNP
- - 60 −60 V
- - 1 −1 A
- - 2 −1.5 A
- - 250 330 mΩ
1 page  
Philips Semiconductors
PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
800
hFE
600
400
200
mle130
(1)
(2)
(3)
1.2
VBE
(V)
0.8
0.4
mle133
(1)
(2)
(3)
0
10−1
1
10 102 103 104
IC (mA)
TR1 (NPN)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 1. DC current gain as a function of collector
current; typical values.
1
VCEsat
(V)
10−1
mle135
10−2
(2) (1)
(3)
10−3
10−1
1
10 102 103 104
IC (mA)
TR1 (NPN)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 3. Collector-emitter saturation voltage as a
function of collector current; typical values.
0
10−1
1
10 102 103 104
IC (mA)
TR1 (NPN)
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 2. Base-emitter voltage as a function of collector
current; typical values.
mle104
1
VCEsat
(V)
10−1
(1)
10−2
10−1
1
(3) (2)
10 102
103 104
IC (mA)
TR1 (NPN)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12701
Objective data sheet
Rev. 01 — 3 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
8. Package outline
Plastic surface mounted package; 6 leads
PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
SOT457
DB
E AX
y
65 4
HE v M A
pin 1
index
1
e
2
bp
3
wM B
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp
c
D
E
e HE Lp Q
v
w
y
mm
1.1 0.1 0.40 0.26
0.9 0.013 0.25 0.10
3.1
2.7
1.7 0.95
1.3
3.0
2.5
0.6 0.33 0.2
0.2 0.23
0.2
0.1
OUTLINE
VERSION
SOT457
IEC
Fig 17. Package outline.
9397 750 12701
Objective data sheet
REFERENCES
JEDEC
EIAJ
SC-74
Rev. 01 — 3 June 2004
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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