|
|
Datasheet PBSS4160V-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
PBS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PBSS2515 | 15 V low VCEsat NPN double transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VS 15 V low VCEsat NPN double transistor
Product specification Supersedes data of 2001 Sep 13 2001 Nov 07
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
FEATURES • 300 mW total power dissipation • Very  NXP Semiconductors transistor | | |
| 2 | PBSS2515E | 0.5A NPN low VCEsat (BISS) transistor PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E.
1. NXP Semiconductors transistor | | |
| 3 | PBSS2515F | low VCEsat NPN transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PBSS2515F 15 V low VCEsat NPN transistor
Product specification Supersedes data of 2001 Jan 26 2001 Sep 21
Philips Semiconductors
Product specification
15 V low VCEsat NPN transistor
FEATURES • Low collector-emitter saturation v NXP Semiconductors transistor | | |
| 4 | PBSS2515VS | 15 V low VCEsat NPN double transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VS 15 V low VCEsat NPN double transistor
Product specification Supersedes data of 2001 Sep 13 2001 Nov 07
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
FEATURES • 300 mW total power dissipation • Very NXP Semiconductors transistor | | |
| 5 | PBSS2515YPN | low VCE(sat) NPN/PNP transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor
Product specification Supersedes data of 2002 May 08 2005 Jan 11
Philips Semiconductors
Product specification
15 V low VCE(sat) NPN/PNP transistor
FEATURES • Low c NXP Semiconductors transistor | | |
| 6 | PBSS2540E | 500 mA NPN low VCEsat (BISS) transistor PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 01 — 4 May 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E.
1.2 F NXP Semiconductors transistor | | |
| 7 | PBSS2540F | 40 V low V NPN transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PBSS2540F 40 V low VCEsat NPN transistor
Product specification 2001 Oct 31
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES • Low collector-emitter saturation voltage • High current capability • Improved ther NXP Semiconductors transistor | |
| Esta página es del resultado de búsqueda del PBSS4160V-PDF.HTML. Si pulsa el resultado de búsqueda de PBSS4160V-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |