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부품번호 | PDTD113E 기능 |
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기능 | resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
PDTD113E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 01 — 14 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number Package
Philips
PDTD113EK
SOT346
PDTD113ES [1] SOT54
PDTD113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB113EK
PDTB113ES
PDTB113ET
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s 500 mA output current capability
s Reduces component count
s Reduces pick and place costs
s ±10 % resistor ratio tolerance
1.3 Applications
s Digital application in automotive and
industrial segments
s Controlling IC inputs
s Cost saving alternative for BC817 series
in digital applications
s Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA
0.7 1
1.3 kΩ
0.9 1.0 1.1
Philips Semiconductors
PDTD113E series
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
6. Thermal characteristics
Table 7:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
SOT346
SOT54
SOT23
Min Typ Max
[1]
- - 500
- - 250
- - 500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Unit
K/W
K/W
K/W
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICEO
collector-base cut-off
current
collector-emitter
cut-off current
VCB = 40 V; IE = 0 A
VCB = 50 V; IE = 0 A
VCE = 50 V; IB = 0 A
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 50 mA
IC = 50 mA; IB = 2.5 mA
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 0.3 V; IC = 20 mA
bias resistor 1 (input)
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 100 MHz
Min Typ Max Unit
- - 100 nA
- - 100 nA
- - 0.5 µA
- - 4 mA
33 -
--
-
0.3 V
0.6 1.1 1.5 V
1.0 1.4 1.8 V
0.7 1
1.3 kΩ
0.9 1
1.1
- 7 - pF
9397 750 14579
Product data sheet
Rev. 01 — 14 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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4페이지 Philips Semiconductors
PDTD113E series
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
9. Packing information
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
Packing quantity
3000 5000 10000
PDTD113EK SOT346
4 mm pitch, 8 mm tape and reel -115 -
-135
PDTD113ES SOT54
bulk, straight leads
- -412 -
SOT54A
tape and reel, wide pitch
- - -116
tape ammopack, wide pitch
-
-
-126
SOT54 variant bulk, delta pinning
- -112 -
PDTD113ET SOT23
4 mm pitch, 8 mm tape and reel -215 -
-235
[1] For further information and the availability of packing methods, see Section 14.
9397 750 14579
Product data sheet
Rev. 01 — 14 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PDTD113E | resistor-equipped transistors | NXP Semiconductors |
PDTD113EU | NPN resistor-equipped transistors | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |