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부품번호 | PUMH20 기능 |
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기능 | NPN/NPN resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 03 — 14 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN/NPN resistor-equipped transistors.
Table 1: Product overview
Type number Package
Philips
PEMH20
SOT666
PUMH20
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD20
PUMD20
PNP/PNP
complement
PEMB20
PUMB20
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place costs
1.3 Applications
s Low current peripheral driver
s Control of IC inputs
s Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
--
--
1.54 2.2
0.8 1
Max Unit
50 V
100 mA
2.86 kΩ
1.2
Philips Semiconductors
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Min Typ Max Unit
[1] - - 625 K/W
[1] [2] - - 625 K/W
[1] - - 416 K/W
[1] [2] - - 416 K/W
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor1 (input)
VCE = 5 V; IC = 1 mA
VCE = 0.3 V; IC = 20 mA
R2/R1
bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
--
--
--
--
30 -
--
- 1.2
2 1.6
1.54 2.2
0.8 1
--
100 nA
1 µA
50 µA
2 mA
-
150 mV
0.5 V
-V
2.86 kΩ
1.2
2.5 pF
9397 750 14425
Product data sheet
Rev. 03 — 14 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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4페이지 Philips Semiconductors
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status Change notice Doc. number Supersedes
PEMH20_PUMH20_3
Modifications:
20050214
Product data sheet -
9397 750 14425 PUMH20_2
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Type PEMH20 added
• Table 8 “Characteristics” Vi(on) and Vi(off) redefined to VI(on) and VI(off)
• Figure 1, 2, 3 and 4 added
• Section 9 “Packing information” added
PUMH20_2
20040414
Product specification -
9397 750 13089 PUMH20_1
PUMH20_1
20031016
Product specification -
9397 750 11894 -
9397 750 14425
Product data sheet
Rev. 03 — 14 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PUMH2 | NPN resistor-equipped double transistor | NXP Semiconductors |
PUMH20 | NPN/NPN resistor-equipped transistors | NXP Semiconductors |
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