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PDF TPC8020-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8020-H | |
| Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
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TPC8020-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
TPC8020-H
High-Speed and High-Efficiency DC-DC Converter
Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: Qg = 23 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.)
• High forward transfer admittance: |Yfs| =32 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
PD
EA S
IAR
EAR
Tc h
Tstg
30
30
±20
13
52
1.9
1.0
110
13
0.084
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
JEDEC
?
JEITA
?
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2004-07-06
1 page  
RDS (ON) – Ta
20
COMMON SOURCE
PULSE TEST
16
ID = 13A
3.5A,6.5A
12
VGS = 4.5 V
8
4
VGS = 10 V
ID = 3.5A,6.5A,13A
0
−80 −40
0
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
TPC8020-H
IDR – VDS
100
10
10
3
4.5
1
COMMON SOURCE
Ta = 25°C
PULSE TEST
1
0
−0.2
−0.4
−0.6
VGS = 0 V
−0.8
−1.0
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
CAPACITANCE – VDS
Ciss
Coss
100
COMMON SOURCE
VVGGSS==00VV
ff == 11 MMHHzz
TTaa == 2255°°CC
10
0.1 1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Ta
2.5
2
1.5
1
COMMON SOURCE
VDS = 10 V
0.5 ID = 1 mA
PULSE TEST
0
−80 −40
0
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a
glass-epoxy board(a) (Note 2a)
(2)Device mounted on a
glass-epoxy board(b) (Note 2b)
10s
0.4
0
0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
5
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50
COMMON SOURCE
ID = 13 A
40 Ta = 25°C
PULSE TEST
VDD = 6 V
30
VDS
20
24 V
12 V
20
16
12
8
10
VGS
0
0 8 16 24 32
TOTAL GATE CHARGE Qg (nC)
4
0
40
2004-07-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8020-H.PDF ] | |
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