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부품번호 | KHB6D0N40F 기능 |
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기능 | (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs | ||
제조업체 | KEC semiconductor | ||
로고 | |||
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
KHB6D0N40P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS=400V, ID=6.0A
Drain-Source ON Resistance :
RDS(ON)=1.0 @VGS=10V
Qg(typ.)=32nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB6D0N40P KHB6D0N40F
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
6.0 6.0*
3.6 3.6*
24 24*
450
9.2
4.5
73 38
0.74 0.3
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.71
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.31 /W
- /W
62.5 /W
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
2005. 12. 15
Revision No : 2
G
S
1/7
www.DataSheet4U.com
KHB6D0N40P/F
1500
1200
900
600
300
0
100
C - VDS
Frequency = 1MHz
Ciss
Coss
Crss
101
Drain - Source Voltage VDS (V)
Safe Operation Area
102 Operation in this
area is limited by RDS(ON)
10µs
101 100µs
1ms
100
10ms
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
100 101
100ms
DC
102 103
Drain - Source Voltage VDS (V)
(KHB6D0N40P)
ID - Tj
6
5
4
3
2
1
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2005. 12. 15
Revision No : 2
12 ID= 6A
10
8
6
Qg- VGS
VDS = 50V
VDS = 125V
VDS = 200V
4
2
0
0 5 10 15 20
Gate - Charge Qg (nC)
25
Safe Operation Area
102
Operation in this
area is limited by RDS(ON)
10 µs
101
1µs
100 10 µs
DC 10 ms
10-1
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
10-2100
101
100 ms
102 103
Drain - Source Voltage VDS (V)
(KHB6D0N40F)
4/7
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KHB6D0N40P/F
- Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 x VDSS
10V
DUT
driver
VGS
VDS
IS
ISD
(DUT)
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2005. 12. 15
Revision No : 2
7/7
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부품번호 | 상세설명 및 기능 | 제조사 |
KHB6D0N40F | (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs | KEC semiconductor |
KHB6D0N40P | (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs | KEC semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |