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PDF BTS7710GP Data sheet ( Hoja de datos )
| Número de pieza | BTS7710GP | |
| Descripción | TrilithIC | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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TrilithIC
BTS 7710 GP
Data Sheet
1 Overview
1.1 Features
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low RDS ON: 70 mτ high-side switch, 40 mτ low-side
switch (typical values @ 25 C)
• Maximum peak current: typ. 15 A @ 25 C=
• Very low quiescent current: typ. 5 ←A @ 25 C=
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 50 kHz
P-TO263-15-1
Type
BTS 7710 GP
Ordering Code
Q67006-A9400
Package
P-TO263-15-1
1.2 Description
The BTS 7710 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7710 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS® technology
which combines low RDS ON vertical DMOS power stages with CMOS control circuitry.
The high-side switch is fully protected and contains the control and diagnosis circuitry.
To achieve low RDS ON and fast switching performance, the low-side switches are
manufactured in S-FET logic level technology. The equivalent standard product is the
BUZ 103 SL.
In contrast to the BTS 7710 G, which consists of the same chips in an P-DSO-28
package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which
opens up applications with even higher currents in the automotive and industrial area.
Data Sheet 1 2001-02-01
1 page  
BTS 7710 GP
1.6 Circuit Description
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages. The inputs are protected by ESD
clamp-diodes.
The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical
power-MOS-FETs.
Output Stages
The output stages consist of an low RDS ON Power-MOS H-bridge. In H-bridge
configuration, the D-MOS body diodes can be used for freewheeling when commutating
inductive loads. If the high-side switches are used as single switches, positive and
negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
Short Circuit Protection
The outputs are protected against
– output short circuit to ground
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-
Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the
output current depending on the junction temperature and the drop voltage.
In the case of overloaded high-side switches the status output is set to low.
Overtemperature Protection
The high-side switches incorporate an overtemperature protection circuit with hysteresis
which switches off the output transistors and sets the status output to low.
Undervoltage-Lockout (UVLO)
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis.
The High-Side output transistors are switched off if the supply voltage VS drops below
the switch off value VUVOFF.
Data Sheet 5 2001-02-01
5 Page 
BTS 7710 GP
3.3 Electrical Characteristics (cont’d)
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 C < Tj < 150 C; 8 V < VS < 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Status Flag Output ST of highside switch
Low output voltage
Leakage current
Zener-limit-voltage
VST L
IST LK
VST Z
– 0.2 0.6 V IST = 1.6 mA
– – 10 ←A VST = 5 V
5.4 – V IST = 1.6 mA
Switching times of highside switch
Turn-ON-time;
to 90% VSH
tON
Turn-OFF-time;
to 10% VSH
tOFF
Slew rate on 10 to 30% VSH dV/dtON
–
–
–
75
60
–
Slew rate off 70 to 40% VSH -dV/ – –
dtOFF
Note: switching times are guaranteed by design
160 ←s
RLoad = 12 τ
VS = 12 V
160 ←s
RLoad = 12 τ
VS = 12 V
1.5 V/←s RLoad = 12 τ
VS = 12 V
2.0 V/←s RLoad = 12 τ
VS = 12 V
Switching times of low-side switch
Turn-ON delay time;
VIL = 5V; RG = 7τ
Switch-ON time;
VIL= 5V; RG = 7τ
Switch-OFF delay time;
VIL= 5V; RG = 7τ
Switch-OFF time;
VIL= 5V; RG = 7τ
td_ON_L
–
tON_L
–
td_OFF_L
–
tOFF_L
–
9 14 ns resistive load
ISL = 3 A; VS = 30 V
25 40 ns resistive load
ISL = 3 A; VS = 30 V
36 55 ns resistive load
ISL = 3 A; VS = 30 V
22 33 ns resistive load
ISL = 3 A; VS = 30 V
Data Sheet 11 2001-02-01
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BTS7710GP.PDF ] | |
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