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Número de pieza | BUF642 | |
Descripción | Silicon NPN High Voltage Switching Transistor | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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BUF642
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25° C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Junction ambient
Test Conditions
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
550
900
9
6
10
3
6
70
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
RthJA
Value
1.78
85
Unit
K/W
K/W
Document Number 86511
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack +1-408-970-5600
1 (8)
1 page BUF642
Vishay Telefunken
Typical Characteristics (Tcase = 25_C unless otherwise specified)
8
6
4
2 0.1 x IC < IB2 < 0.5 x IC
VCESat < 2V
0
0
95 10544
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
Figure 4. VCEW – Diagram
100
1.76 K/W
10 12.5 K/W
1
25 K/W
0.1 50 K/W
RthJA = 85 K/W
0.01
0.001
0
95 10545
25 50 75 100 125 150
Tcase ( °C )
Figure 7. Ptot vs.Tcase
5
IB=390mA
4
290mA
200mA
3
100mA
2
50mA
1
24mA
0
0
95 10550
4 8 12 16 20
VCE – Collector Emitter Voltage ( V )
Figure 5. IC vs. VCE
10
1A
2A 4A
1
6A
0.1
IC = 0.5A
0.01
0.01
95 10551
0.1 1
IB – Base Current ( A )
Figure 8. VCEsat vs. IB
10
100 100
75°C
125°C
10V
Tj = 25°C
10 5V
10
VCE = 2V
1
0.001
95 10552
0.01 0.1
1
IC – Collector Current ( A )
Figure 6. hFE vs. IC
10
Document Number 86511
Rev. 2, 20–Jan–99
1
0.001
95 10553
0.01 0.1
1
IC – Collector Current ( A )
Figure 9. hFE vs. IC
10
www.vishay.de • FaxBack +1-408-970-5600
5 (8)
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BUF642.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUF642 | Silicon NPN High Voltage Switching Transistor | Vishay Siliconix |
BUF644 | Silicon NPN High Voltage Switching Transistor | Vishay Siliconix |
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BUF646A | Silicon NPN High Voltage Switching Transistor | TEMIC |
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