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Número de pieza | BUF644 | |
Descripción | Silicon NPN High Voltage Switching Transistor | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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BUF644
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25° C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
500
700
9
8
12
4
6
70
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
Value
1.78
Unit
K/W
Document Number 86512
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack +1-408-970-5600
1 (9)
1 page BUF644
Vishay Telefunken
Typical Characteristics (Tcase = 25_C unless otherwise specified)
8
6
4
2 0.1 x IC < IB2 < 0.5 x IC
VCESat < 2V
0
0
95 10558
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
Figure 4. VCEW – Diagram
100
1.76 K/W
10 12.5 K/W
1
25 K/W
0.1 50 K/W
RthJA = 85 K/W
0.01
0.001
0
95 10545
25 50 75 100 125 150
Tcase ( °C )
Figure 7. Ptot vs.Tcase
10
8
6
4
2
0
0
94 9207
100
Tj = 25°C
1.4A
1A
800mA
600mA
400mA
200mA
IB = 50mA
2 4 6 8 10
VCE - Collector Emitter Voltage (V)
Figure 5. IC vs. VCE
10
5A
1
2A 3A
0.1
IC = 0.75A
4A
1.25A
0.01
0.01
94 9208
0.1 1
IB - Base Current (A)
Figure 8. VCEsat vs. IB
100
10
VCE = 10V
10
VCE = 5V
Tj = 125°C
Tj = 25°C
Tj = –25°C
10
VCE = 2V
1
0.01
94 9209
0.1 1
IC - Collector Current (A)
Figure 6. hFE vs. IC
10
VCE = 2V
1
0.01 0.1
1
94 9210
IC - Collector Current (A)
Figure 9. hFE vs. IC
10
Document Number 86512
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack +1-408-970-5600
5 (9)
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUF644.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUF642 | Silicon NPN High Voltage Switching Transistor | Vishay Siliconix |
BUF644 | Silicon NPN High Voltage Switching Transistor | Vishay Siliconix |
BUF646 | Silicon NPN High Voltage Switching Transistor | TEMIC |
BUF646A | Silicon NPN High Voltage Switching Transistor | TEMIC |
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