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V29C51001T 데이터시트 PDF




Mosel Vitelic에서 제조한 전자 부품 V29C51001T은 전자 산업 및 응용 분야에서
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부품번호 V29C51001T 기능
기능 (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY
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V29C51001T 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MOSEL VITELIC
V29C51001T/V29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
Features
s 128Kx8-bit Organization
s Address Access Time: 45, 70, 90 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 8KB Boot Block (lockable)
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 2.5V
s Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
– V29C51001T (Top Boot Block)
– V29C51001B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The V29C51001T/V29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The V29C51001T/V29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O7 or by the Toggle Bit I/O6.
The V29C51001T/V29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (V29C51001T) or the bottom (V29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The V29C51001T/V29C51001B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
PTJ
•••
Access Time (ns)
45 70 90
•••
Power
Std.
Temperature
Mark
Blank
V29C51001T/V29C51001B Rev. 0.8 October 2000
1




V29C51001T pdf, 반도체, 판매, 대치품
MOSEL VITELIC
V29C51001T/V29C51001B
Absolute Maximum Ratings(1)
Symbol
Parameter
Commercial
Unit
VIN Input Voltage (input or I/O pins)
-2 to +7
V
VIN Input Voltage (A9 pin, OE)
-2 to +13
V
VCC Power Supply Voltage
-0.5 to +5.5
V
TSTG
Storage Temperature (Plastic)
-65 to +125
°C
TOPR
IOUT
Operating Temperature
Short Circuit Current(2)
0 to +70
200 (Max.)
°C
mA
NOTE:
1. Stress greater than those listed unders Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
VIL
VIH
IIL
IOL
VOL
VOH
ICC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
ICC2 Program Current
ISB TTL Standby Current
ISB1 CMOS Standby Current
VH Device ID Voltage for A9
IH Device ID Current for A9
Test Conditions
VCC = VCC Min.
VCC = VCC Max.
VIN = GND to VCC, VCC = VCC Max.
VOUT = GND to VCC, VCC = VCC Max.
VCC = VCC Min., IOL = 2.1mA
VCC = VCC Min, IOH = -400µA
CE = OE = VIL, WE = VIH, all I/Os open,
Address input = VIL/VIH, at f = 1/tRC Min.,
VCC = VCC Max.
CE = WE = VIL, OE = VIH, VCC = VCC Max.
CE = OE = WE = VIH, VCC = VCC Max.
CE = OE = WE = VCC 0.3V, VCC = VCC Max.
CE = OE = VIL, WE = VIH
CE = OE = VIL, WE = VIH, A9 = VH Max.
Min.
2
2.4
Max.
0.8
±1
±1
0.4
40
Unit
V
V
µA
µA
V
V
mA
50
2
150
11.5 12.5
50
mA
mA
µA
V
µA
V29C51001T/V29C51001B Rev. 0.8 October 2000
4

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V29C51001T 전자부품, 판매, 대치품
MOSEL VITELIC
V29C51001T/V29C51001B
Waveforms of CE Controlled-Program Cycle
ADDRESS
WE
tWC
5555H
PA
tAS
tAH
PA(1)
tRC
OE
tWP tWHWH1
CE
tOES
tWPH
tDS
tDH
I/O
A0H
PD(2)
I/O7 DOUT
tOE
Waveforms of Erase Cycle(1)
ADDRESS
tWC
5555H
tAS
2AAAH
CE
5555H
tAH
5555H
2AAAH
SA
tDF
tOH
51001-09
OE
tWP
WE
tCS tWPH
tDS
tDH
I/O
AAH
55H
80H AAH
NOTES:
1. PA: The address of the memory location to be programmed.
2. PD: The data at the byte address to be programmed.
3. SA: The sector address for Sector Erase. Address = dont care for Chip Erase.
55H
10H for
Chip Erase
30H
51001-10
V29C51001T/V29C51001B Rev. 0.8 October 2000
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관련 데이터시트

부품번호상세설명 및 기능제조사
V29C51001B

1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Mosel Vitelic  Corp
Mosel Vitelic Corp
V29C51001B

(V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY

Mosel Vitelic
Mosel Vitelic

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