BTS7740G Datasheet PDF - Infineon Technologies
| Part Number | BTS7740G | |
| Description | Trilith IC | |
| Manufacturers | Infineon Technologies | |
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TrilithIC
BTS 7740 G
Data Sheet
1 Overview
1.1 Features
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low RDS ON: 110 mτ high-side switch, 100 mτ low-
side switch (typical values @ 25 C)
• Maximum peak current: typ. 8 A @ 25 C=
• Very low quiescent current: typ. 5 ←A @ 25 C=
• Small outline, enhanced power P-DSO-package
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 1 kHz
P-DSO-28-14
Type
BTS 7740 G
Ordering Code
Q67007-A9374
Package
P-DSO-28-14
1.2 Description
The BTS 7740 G is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7740 G can be used in H-bridge- as well as in any other
configuration. Both the double high-side and the two low-side switches of the
BTS 7740 G are manufactured in SMART SIPMOS® technology which combines low
RDS ON vertical DMOS power stages with CMOS control circuitry. The high-side switch is
fully protected and contains the control and diagnosis circuitry. Also the low-side
switches are fully protected, the equivalent standard product is the BSP 77.
In contrast to the BTS 7750 G, which consists of lower ohmic chips in the same
package, the BTS 7740 G offers a lower price for applications, which do not need the
high current capability of the BTS 7750 G or BTS 7750 GP.
Data Sheet 1 2001-02-01
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BTS 7740 G
1.6 Circuit Description
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages. The inputs are protected by ESD
clamp-diodes.
The inputs IL1 and IL2 are connected to the internal gate-driving units of the N-channel
vertical power-MOS-FETs.
Output Stages
The output stages consist of an low RDS ON Power-MOS H-bridge. In H-bridge
configuration, the D-MOS body diodes can be used for freewheeling when commutating
inductive loads. If the high-side switches are used as single switches, positive and
negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
Short Circuit Protection
The outputs are protected against
– output short circuit to ground
– output short circuit to the supply voltage, and
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-
Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the
output current depending on the junction temperature and the drop voltage.
In the case of overloaded high-side switches the status output is set to low.
The fully protected low-side switches have no status output.
Overtemperature Protection
The high-side and the low-side switches also incorporate an overtemperature protection
circuit with hysteresis which switches off the output transistors. In the case of the high-
side switches, the status output is set to low.
Undervoltage-Lockout (UVLO)
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis.
The High-Side output transistors are switched off if the supply voltage VS drops below
the switch off value VUVOFF.
Data Sheet 5 2001-02-01
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| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BTS7740G.PDF Datasheet ] | |
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