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PDF BTS780 Data sheet ( Hoja de datos )
| Número de pieza | BTS780 | |
| Descripción | Trilith IC | |
| Fabricantes | Siemens Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS780 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
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TrilithIC™
BTS 780
Target Data
Overview
Features
• Quad switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Ultra low RDS ON @ 25 °C:
High-side switch: typ. 35 mΩ,
Low-side switch: typ. 15 mΩ
• Very high peak current capability
• Very low quiescent current
• Space- and thermal optimized SMD-Power-Package
• Load and GND-short-circuit-protected
• Operates up to 40 V
• 2-Bit status flag diagnosis
• Overtemperature shut down with hysteresis
• Short-circuit detection and diagnosis
• Open-load detection and diagnosis
• C-MOS compatible inputs
• Internal clamp diodes
• Isolated sources for external current sensing
• Over- and under-voltage detection with hysteresis
P-TO263-15-1
Type
BTS 780
Ordering Code
on request
Package
P-TO263-15-1
Description
The BTS 780 is a TrilithIC contains one double high-side switch and two low-side
switches in one P-TO263-15-1.
“Silicon instead of heatsink”
becomes true
The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical
construction and mounting and increases the efficiency.
The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis (the
comparable standard high-side product is the BTS 734L1).
Semiconductor Group
1
1998-02-01
1 page  
BTS 780
ST1 6
DST1
C6V1
ST2 10
DST2
C6V1
DVHS
16 Heat-Slug 2
Diagnosis
Biasing and Protection
GH1 5
R I1
3.5 k Ω
GH2 9
R I2
3.5 k Ω
GND 4, 8
Driver
IN OUT
DI1 1 2 1 2
C6V1 0 0 L L
0 1LH
10HL
1 1HH
DI2
C6V1
GL1 3
R O1
10 k Ω
R O2
10 k Ω
11 SH2
Heat-Slug 3 15
DL2
7 SH1
Heat-Slug 1 17
DL1
GL2 14
1, 2
SL1
12, 13
SL2
AEB02225
Figure 2 Block Diagram
Semiconductor Group
5
1998-02-01
5 Page 
BTS 780
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption
Quiescent current
IS
– 15 40
Quiescent current
IS – – 50
Supply current
Supply current
IS – 2 4
IS – 4 8
Under-Voltage-Lockout (UVLO)
Switch-ON voltage
VUV ON
–
–
7
Switch-OFF voltage
VUV OFF 3.5 –
–
Switch ON/OFF hysteresis VUV HY –
0.2 –
Over-Voltage-Lockout (OVLO)
Switch-OFF voltage
Switch-ON voltage
Switch OFF/ON hysteresis
VOV OFF
VOV ON
VOV HY
34
33
–
– 43
––
0.5 –
µA GH1 = GH2 = L
VS = 13.2 V
Tj = 25 °C
µA GH1 = GH2 = L
VS = 13.2 V
mA GH1 or GH2 = H
mA GH1 and GH2 = H
V VS increasing
V VS decreasing
V
V V–UV ON
UV OFF
V VS increasing
V VS decreasing
V
V V–OV OFF
OV ON
Semiconductor Group
11
1998-02-01
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BTS780.PDF ] | |
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