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K6F1616U6C 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6F1616U6C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K6F1616U6C 자료 제공

부품번호 K6F1616U6C 기능
기능 16Mb(1M x 16 bit) Low Power SRAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K6F1616U6C 데이터시트, 핀배열, 회로
www.DataSheet4U.com
K6F1616U6C Family
CMOS SRAM
16Mb(1M x 16 bit) Low Power SRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROP-
ERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 Revision 2.0
May 2005




K6F1616U6C pdf, 반도체, 판매, 대치품
K6F1616U6C Family
CMOS SRAM
PRODUCT LIST
Part Name
K6F1616U6C-FF55
K6F1616U6C-XF55
K6F1616U6C-FF70
K6F1616U6C-XF70
1. LF : Lead Free Product
Industrial Temperature Products(-40~85°C)
Function
48-FBGA, 55ns, 3.0V
48-FBGA, 55ns, 3.0V, LF1)
48-FBGA, 70ns, 3.0V
48-FBGA, 70ns, 3.0V, LF1)
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
LB
H X1) X1) X1) X1)
X1) L X1) X1) X1)
X1) X1) X1) X1)
H
L HHH L
L H H H X1)
LHLHL
L H L HH
LHLHL
L H X1) L L
L H X1) L H
L H X1) L
1. X means dont care. (Must be low or high state)
L
UB I/O1~8 I/O9~16
Mode
X1) High-Z High-Z
Deselected
X1) High-Z High-Z
Deselected
H High-Z High-Z
Deselected
X1) High-Z High-Z
Output Disabled
L High-Z High-Z Output Disabled
H Dout High-Z Lower Byte Read
L High-Z Dout Upper Byte Read
L Dout Dout
Word Read
H Din High-Z Lower Byte Write
L High-Z Din
Upper Byte Write
L Din Din
Word Write
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
VIN,VOUT
VCC
PD
TSTG
TA
Ratings
-0.2 to VCC+0.3V(Max. 3.6V)
-0.2 to 3.6
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
4 Revision 2.0
May 2005

4페이지










K6F1616U6C 전자부품, 판매, 대치품
K6F1616U6C Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
Address
Data Out
tOH
Previous Data Valid
tAA
tRC
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS1
tAA
tCO
tRC
tOH
CS2
UB, LB
OE
Data out
High-Z
tBA
tOE
tOLZ
tBLZ
tLZ
Data Valid
tHZ
tBHZ
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
7 Revision 2.0
May 2005

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