MMG3009NT1 Datasheet PDF - Freescale Semiconductor
| Part Number | MMG3009NT1 | |
| Description | Heterojunction Bipolar Transistor | |
| Manufacturers | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3009NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U MT S a n d g e n e r a l
small - signal RF.
Features
• Frequency: 0 to 6000 MHz
• P1dB: 18 dBm @ 900 MHz
• Small - Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3009NT1
Rev. 2, 5/2006
MMG3009NT1
0 - 6000 MHz, 15 dB
18 dBm
InGaP HBT
12 3
CASE 1514 - 01, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol 900 2140
MHz MHz
Small - Signal Gain
(S21)
Gp 15 14
Input Return Loss
(S11)
IRL - 13 - 26
Output Return Loss
(S22)
ORL
- 17 - 15
Power Output @1dB P1db 18 18
Compression
Third Order Output
Intercept Point
IP3 34 32
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
3500
MHz
12.5
- 22
- 24
17.5
31
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage (2)
VCC 7 V
Supply Current (2)
ICC 300 mA
RF Input Power
Pin 10 dBm
Storage Temperature Range
Tstg - 65 to +150 °C
Junction Temperature (3)
TJ 150 °C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 70 mA, TC = 25°C)
Characteristic
Symbol
Value (4)
Thermal Resistance, Junction to Case
RθJC
81
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MMG3009NT1
6-1
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50 OHM TYPICAL CHARACTERISTICS
36
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.9 4.95 5 5.05 5.1
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
35
34
33
32
31
30
VCC = 5 Vdc
29 f = 900 MHz
1 MHz Tone Spacing
28
−40 −20 0 20 40 60 80 100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
−30
−40
−50
−60
VCC = 5 Vdc
−70 ICC = 70 mA
f = 900 MHz
1 MHz Tone Spacing
−80
0 3 6 9 12 15
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
105
104
103
120 125
130 135 140 145 150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 70 mA
Figure 11. MTTF versus Junction Temperature
8
6
4
2
VCC = 5 Vdc
ICC = 70 mA
0
01
23
4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
Freescale Semiconductor
RF Product Device Data
−20
VCC = 5 Vdc
ICC = 70 mA
−30 f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−40
−50
−60
−70
2 4 6 8 10 12 14 16
Pout, OUTPUT POWER (dBm)
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3009NT1
6-5
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| Information | Total 12 Pages | |
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| Download | [ MMG3009NT1.PDF Datasheet ] | |
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