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부품번호 | BLC6G10LS-200 기능 |
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기능 | UHF power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
−39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = −39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
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Philips Semiconductors
8. Package outline
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D1
L
H U2
A
U1 B
q Cc
1
w1 M A M B M
p
3
2
b w2 M C M
E1 E
Q
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
c
D D1 E E1 F H L p Q q U1 U2 w1 w2
mm
4.1 12.83 0.17
3.3 12.57 0.14
19.9 20.42 9.53 9.78 1.14 19.94 5.3
19.7 20.12 9.27 9.53 0.89 18.92 4.5
3.38
3.12
1.75
1.50
27.94
34.16
33.91
9.98
9.65
inches
0.161
0.130
0.505
0.495
0.0065
0.0055
0.785 0.804
0.775 0.792
0.375
0.365
0.385
0.375
0.045
0.035
0.785
0.745
0.209
0.177
0.133
0.123
0.069
0.059
1.100
1.345
1.335
0.392
0.380
0.25
0.01
0.6
0.023
OUTLINE
VERSION
SOT895-1
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-28
06-02-21
Fig 1. Package outline SOT895-1
BLC6G10-200_6G10LS-200_1
Objective data sheet
Rev. 01 — 19 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
10. Revision history
Table 9: Revision history
Document ID
BLC6G10-200_6G10LS-200_1
Release date
20060419
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
BLC6G10-200_6G10LS-200_1
Objective data sheet
Rev. 01 — 19 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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BLC6G10LS-200 | UHF power LDMOS transistor | NXP Semiconductors |
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