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Número de pieza | MGF0951P | |
Descripción | L & S BAND GaAs FET | |
Fabricantes | Mitsubishi Electric | |
Logotipo | ||
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MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
• High power gain
Glp=13dB(TYP.) @f=2.15GHz
• High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
• Plastic Mold Lead-less PKG
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=200mA • Rg=500Ω
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID Drain current
800
IGR Reverse gate current
-2.5
IGF Forward gate current
5.4
PT Total power dissipation
6.0
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
mA
mA
mA
W
°C
°C
Recommended maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
Tch Cannel temperature
150 °C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
VGS(off)
gm
Po
ηadd *1
GLP *2
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
3rd order Modulation Distortion
Thermal Resistance *1
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=2.15GHz
*1:Pin=20dBm, *2:Pin=10dBm
*3:f1=2.15GHz,f2=2.16GHz
Po(SCL)=20dBm
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Min.
-1
--
29.5
--
11
--
--
Limits
Typ.
-3
200
31
50
13
-45
20
Max.
-5
--
--
--
--
--
25
Unit
V
mS
dBm
%
dB
dBc
°C/W
(1/42)
Mitsubishi Electric
Mar./2005
1 page MGF0951P TESTFIXTURE
VG FREQ=2.15GHz
VD
500ohm
5pF
51ohm
1000pF
4.7uF
1000pF
0.5pF
2pF
20pF
1pF
20pF
MGF0
Pin 951P Pout
Lot.No
BoardMaterial:Teflon-Fiberglass,t=0.4mm,Er=2.6
70mm
(5/42)
Mitsubishi Electric
Mar./2005
5 Page MGF0951P RF TEST DATA(CW)
Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.6GHz
IDQ=0.2A
13
12
11
10
9
8
7
6 VD=10V
5 VD=9V
VD=8V
4
0 5 10 15 20 25 30
Pin(dBm)
Gp v.s. Pin freq.=2.6GHz
IDQ=0.16A
13
12
11
10
9
8
7
6 VD=10V
5 VD=9V
4 VD=8V
0 5 10 15 20 25 30
Pin(dBm)
Gp v.s. Pin freq.=2.6GHz
IDQ=0.12A
13
12
11
10
9
8
7
6 VD=10V
5 VD=9V
4 VD=8V
0 5 10 15 20 25 30
Pin(dBm)
Gp v.s. Pin freq.=2.6GHz
IDQ=0.05A
13
12
11
10
9
8
7
6 VD=10V
5
VD=9V
VD=8V
4
0 5 10 15 20 25 30
Pin(dBm)
Po v.s. Pin freq.=2.6Hz
IDQ=0.2A
34
32
30
28
26
24
22
20
18
16
14
12
10
0
VD=10V
VD=9V
VD=8V
5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.6Hz
IDQ=0.16A
VD=10V
VD=9V
VD=8V
5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.6Hz
IDQ=0.12A
VD=10V
VD=9V
VD=8V
5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.6Hz
IDQ=0.12A
VD=10V
VD=9V
VD=8V
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.6GHz
IDQ=0.2A
0.5 VD=10V
VD=9V
0.4 VD=8V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.6GHz
IDQ=0.16A
0.5 VD=10V
VD=9V
0.4 VD=8V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.6GHz
IDQ=0.12A
0.5 VD=10V
VD=9V
0.4 VD=8V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.6GHz
IDQ=0.12A
0.5
VD=10V
VD=9V
0.4 VD=8V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Ig(RF) v.s. Pin freq.=2.6GHz
IDQ=0.2A
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0 VD=10V
-3.5
VD=9V
VD=8V
-4.0
0 5 10 15 20 25 30
Pin(dBm)
Ig(RF) v.s. Pin freq.=2.6GHz
IDQ=0.16A
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0 VD=10V
-3.5 VD=9V
VD=8V
-4.0
0 5 10 15 20 25 30
Pin(dBm)
Ig(RF) v.s. Pin freq.=2.6GHz
IDQ=0.12A
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
VD=10V
VD=9V
VD=8V
5 10 15 20 25 30
Pin(dBm)
Ig(RF) v.s. Pin freq.=2.6GHz
IDQ=0.12A
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0 VD=10V
-3.5 VD=9V
-4.0 VD=8V
0 5 10 15 20 25 30
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION
(11/42)
Mar./2005
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet MGF0951P.PDF ] |
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