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MGF0951P 데이터시트 PDF




Mitsubishi Electric에서 제조한 전자 부품 MGF0951P은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MGF0951P 기능
기능 L & S BAND GaAs FET
제조업체 Mitsubishi Electric
로고 Mitsubishi Electric 로고


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MGF0951P 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
High power gain
Glp=13dB(TYP.) @f=2.15GHz
High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
Plastic Mold Lead-less PKG
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=200mA Rg=500
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID Drain current
800
IGR Reverse gate current
-2.5
IGF Forward gate current
5.4
PT Total power dissipation
6.0
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
mA
mA
mA
W
°C
°C
Recommended maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
Tch Cannel temperature
150 °C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
VGS(off)
gm
Po
ηadd *1
GLP *2
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
3rd order Modulation Distortion
Thermal Resistance *1
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=2.15GHz
*1:Pin=20dBm, *2:Pin=10dBm
*3:f1=2.15GHz,f2=2.16GHz
Po(SCL)=20dBm
Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Min.
-1
--
29.5
--
11
--
--
Limits
Typ.
-3
200
31
50
13
-45
20
Max.
-5
--
--
--
--
--
25
Unit
V
mS
dBm
%
dB
dBc
°C/W
(1/42)
Mitsubishi Electric
Mar./2005




MGF0951P pdf, 반도체, 판매, 대치품
f
(MHz)
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
6200
6400
6600
6800
7000
MGF0951P S PARAMETERS (Ta=25°C,VD=10V,ID=200mA)
S11
Magn. Angle(deg.)
0.847
-98.9
0.827
-115.4
0.807
-127.9
0.797
-137.6
0.785
-145.0
0.777
-151.3
0.772
-156.1
0.763
-160.3
0.754
-164.1
0.745
-167.7
0.733
-171.3
0.720
-175.0
0.709
-178.8
0.698
177.4
0.689
173.5
0.678
169.7
0.669
166.0
0.660
162.4
0.651
158.4
0.641
154.1
0.630
149.4
0.619
144.6
0.608
140.0
0.599
135.2
0.589
130.4
0.577
125.2
0.563
120.3
0.549
115.0
0.533
108.4
0.518
101.4
0.505
93.1
0.497
84.1
0.501
74.8
S Parameter(TYP.)
S21 S12
Magn. Angle(deg.) Magn. Angle(deg.)
7.176
117.6
0.039
44.1
5.972
106.5
0.043
37.8
5.076
97.3
0.046
34.1
4.392
89.6
0.048
31.5
3.867
82.8
0.051
29.6
3.450
76.6
0.052
29.0
3.127
71.0
0.053
28.2
2.865
65.7
0.056
28.0
2.655
60.8
0.058
27.2
2.485
55.8
0.060
27.4
2.342
50.9
0.064
26.7
2.223
46.1
0.067
25.9
2.114
41.4
0.070
25.4
2.023
36.7
0.073
24.8
1.939
31.8
0.076
23.9
1.867
27.2
0.080
22.8
1.807
22.6
0.084
22.0
1.756
18.1
0.089
21.6
1.715
13.4
0.095
20.2
1.677
8.5
0.101
18.6
1.640
3.6
0.108
16.8
1.604 -1.2 0.114 15.0
1.572 -6.1 0.122 12.9
1.543
-11.1
0.129
10.5
1.512
-16.2
0.137
7.9
1.486
-21.3
0.146
5.1
1.466
-26.4
0.156
2.2
1.453
-31.6
0.165
-0.9
1.440
-37.1
0.177
-4.6
1.427
-42.9
0.189
-8.3
1.417
-48.9
0.201
-12.7
1.403
-55.3
0.213
-17.2
1.386
-61.9
0.226
-22.5
S22
Magn. Angle(deg.)
0.186
-115.6
0.207
-126.0
0.225
-133.2
0.240
-137.7
0.256
-140.5
0.270
-142.7
0.284
-143.5
0.295
-144.3
0.303
-144.8
0.314
-145.3
0.325
-145.4
0.335
-145.3
0.342
-145.4
0.346
-146.1
0.350
-147.5
0.351
-148.9
0.351
-149.5
0.346
-150.5
0.340
-152.0
0.334
-154.4
0.332
-156.5
0.328
-158.4
0.323
-160.6
0.318
-163.5
0.316
-167.3
0.316
-170.5
0.314
-172.9
0.307
-175.5
0.300
-178.9
0.293
177.0
0.286
173.4
0.269
169.2
0.245
162.5
K
0.476
0.564
0.666
0.767
0.855
0.951
1.027
1.099
1.173
1.223
1.269
1.312
1.358
1.399
1.426
1.451
1.462
1.458
1.451
1.442
1.413
1.410
1.398
1.378
1.356
1.337
1.305
1.287
1.263
1.243
1.222
1.206
1.185
MSG/MAG
(dB)
22.7
21.4
20.4
19.6
18.8
18.2
16.7
15.2
14.1
13.3
12.5
11.9
11.3
10.7
10.2
9.7
9.3
8.9
8.6
8.3
8.0
7.7
7.4
7.1
6.9
6.6
6.4
6.2
6.0
5.8
5.6
5.4
5.3
TOP SIDE
BOTTOM
1.08
ab
3.40
bc a
1.48
0.45 2.26
Fig1.OUTLINE DRAWING
a:Gate
b:Dorain
c:Source Unit:mm
(4/42)
Mitsubishi Electric
Mar./2005

4페이지










MGF0951P 전자부품, 판매, 대치품
MGF0951P RF TEST DATA(CW)
Gp,Po,Id(RF),Ig(RF) v.s. Pin
13
12
11
10
9
8
7
6
5
4
0
Gp v.s. Pin freq.=2.5GHz
VD=10V
IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
IDQ=0.05A
5 10 15 20 25 30
Pin(dBm)
Gp v.s. Pin freq.=2.5GHz
VD=9V
13
12
11
10
9
8
7
6
IDQ=0.2A
IDQ=0.16A
5 IDQ=0.12A
4 IDQ=0.05A
0 5 10 15 20 25 30
Pin(dBm)
Gp v.s. Pin freq.=2.5GHz
13 VD=8V
12
11
10
9
8
7 IDQ=0.2A
6 IDQ=0.16A
5 IDQ=0.12A
IDQ=0.05A
4
0 5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.5GHz
VD=10V
IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
IDQ=0.05A
5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.5GHz
VD=9V
IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
IDQ=0.05A
5 10 15 20 25 30
Pin(dBm)
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Po v.s. Pin freq.=2.5GHz
VD=8V
IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
IDQ=0.05A
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.5GHz
VD=10V
0.5 IDQ=0.2A
IDQ=0.16A
0.4
IDQ=0.12A
IDQ=0.05A
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.5GHz
VD=9V
0.5 IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
0.4 IDQ=0.05A
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Id(RF) v.s. Pin freq.=2.5GHz
VD=8V
0.5 IDQ=0.2A
IDQ=0.16A
0.4 IDQ=0.12A
IDQ=0.05A
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
Pin(dBm)
Ig(RF) v.s. Pin freq.=2.5GHz
VD=10V
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0 IDQ=0.2A
IDQ=0.16A
-3.5 IDQ=0.12A
-4.0 IDQ=0.05A
0 5 10 15 20 25 30
Pin(dBm)
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
P Ig(RF) v.s. Pin
freq.=2.5GHz VD=9V
IDQ=0.2A
IDQ=0.16A
IDQ=0.12A
IDQ=0.05A
5 10 15 20 25
Pin(dBm)
30
Ig(RF) v.s. Pin freq.=2.5GHz
VD=8V
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
IDQ=0.2A
IDQ=0.16A
-3.5 IDQ=0.12A
-4.0 IDQ=0.05A
0 5 10 15 20 25 30
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION
(7/42)
Mar./2005

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부품번호상세설명 및 기능제조사
MGF0951P

L & S BAND GaAs FET

Mitsubishi Electric
Mitsubishi Electric

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