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부품번호 | JANTXV2N7228U 기능 |
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기능 | POWER MOSFET SURFACE MOUNT | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 7 페이지수
www.DataSheet4U.com
PD - 90418C
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN450
0.415 Ω
ID
12A
IRFN450
JANTX2N7228U
JANTXV2N7228U
REF:MIL-PRF-19500/592
500V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
12
8.0
48
150
1.2
±20
750
12
15
3.5
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
1/25/01
IRFN450
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
13a & b
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 10.4mH
Peak IL = 12A, VGS = 10V
IRFN450
➂ ISD ≤ 12A, di/dt ≤ 130A/µs,
VDD ≤ 500V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1- DRAIN
2- GATE
3- SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
www.irf.com
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부품번호 | 상세설명 및 기능 | 제조사 |
JANTXV2N7228 | Power MOSFET ( Transistor ) | IRF |
JANTXV2N7228U | POWER MOSFET SURFACE MOUNT | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |