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PDF BLF4G10LS-120 Data sheet ( Hoja de datos )
| Número de pieza | BLF4G10LS-120 | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.
Mode of operation VDS PL
(V) (W)
Gp ηD ACPR400 ACPR600 EVM
(dB) (%) (dBc)
(dBc)
(%)
CW
28 120
19 57 -
-
-
GSM EDGE
28 48 (AV) 19 40 −61 [1]
−72 [2]
1.5
2-tone
28 120 (PEP) 19 46 - - -
IMD3
(dBc)
-
-
−31
[1] ACPR400 at 30 kHz resolution bandwidth
[2] ACPR600 at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply
voltage of 28 V and an IDq of 650 mA
x Load power = 48 W (AV)
x Gain = 19 dB (typ)
x Efficiency = 40 % (typ)
x ACPR400 = −61 dBc (typ)
x ACPR600 = −72 dBc (typ)
x EVMrms = 1.5 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (800 MHz to 1000 MHz)
s Internally matched for ease of use
1 page  
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Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
20
Gp
(dB)
19
18
17
16
Gp
ηD
001aac414
50
ηD
(%)
40
30
20
10
−50
ACPR
(dBc)
−60
−70
−80
001aac415
ACPR400
ACPR600
15
0
0
20 40 60 80
PL(AV) (W)
−90
0
20 40 60 80
PL(AV) (W)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
10
EVM
(%)
8
6
4
2
001aac416
EVMM
EVMrms
−56
ACPR
(dBc)
−60
−64 ACPR400
−68
001aac417
4
EVM
(%)
3
3
2
EVMrms
2
1
1
0
0 20 40 60 80
PL(AV) (W)
−72
0
0
10 20 30 40 50
ηD (%)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14547
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
BLF4G10LS-120_1 20060110
Product data sheet
Change notice Doc. number Supersedes
- 9397 750 14547 -
9397 750 14547
Product data sheet
Rev. 01 — 10 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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