PDF BLF4G10S-120 Data sheet ( Hoja de datos )

Número de pieza	BLF4G10S-120
Descripción	UHF power LDMOS transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product proﬁle 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of f operation (MHz) VDS PL (V) (W) Gp ηD ACPR400 ACPR600 (dB) (%) (dBc) (dBc) (typ) (typ) (typ) EVMrms IMD3 (%) (dBc) (typ) CW 861 to 961 28 120 19 57 - - -- GSM EDGE 861 to 961 28 48 (AV) 19 40 −61 [1] −72 [2] 1.5 - 2-tone 861 to 961 28 120 (PEP) 19 46 - - - −31 [1] ACPR400 at 30 kHz resolution bandwidth [2] ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use 1 page www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 20 Gp (dB) 19 Gp 18 ηD 001aac404 60 ηD (%) 40 −55 ACPR (dBc) −65 20 −75 001aac405 ACPR400 ACPR600 17 0 0 20 40 60 80 PL(AV) (W) −85 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 5. GSM EDGE power gain and drain efﬁciency as functions of average load power; typical values VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as functions of average load power; typical values 4 EVMrms (%) 3 001aac406 −57 ACPR (dBc) −59 001aac407 4 EVM (%) 3 ACPR400 2 −61 2 EVMrms 1 −63 1 0 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 7. GSM EDGE rms EVM as a function of average load power; typical values −65 0 0 20 40 60 ηD (%) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efﬁciency; typical values 9397 750 14549 Product data sheet Rev. 01 — 10 January 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 5 of 14 5 Page www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 10. Abbreviations Table 9: Abbreviations Acronym Description ACPR Adjacent Channel Power Ratio CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution ESR Equivalent Series Resistance EVM Error Vector Magnitude GSM Global System for Mobile communications IDq LDMOS quiescent drain current Laterally Diffused Metal Oxide Semiconductor PEP Peak Envelope Power RF Radio Frequency SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio 9397 750 14549 Product data sheet Rev. 01 — 10 January 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 11 of 14 11 Page

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