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Número de pieza | NLAS4717EP | |
Descripción | Dual SPDT Analog Switch | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NLAS4717EP
4.5 W High Bandwidth, Dual
SPDT Analog Switch
The NLAS4717EP is an advanced CMOS analog switch fabricated
in sub−micron silicon gate CMOS technology. The device is a dual
independent Single Pole Double Throw (SPDT) switch featuring low
RDS(on) of 4.5 W at 3.0 V.
The device also features guaranteed Break−Before−Make (BBM)
switching, assuring the switches never short the driver.
The NLAS4717EP is available in two small size packages:
Microbump: 2.0 x 1.5 mm
WQFN−10: 1.4 x 1.8 mm
Features
Low RDS(on): 4.5 W @ 3.0 V
Matching Between the Switches 0.5 W
Wide Voltage Range: 1.8 V to 5.5 V
High Bandwidth > 90 MHz
1.65 V to 5.5 V Operating Range
Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)
Ultra−Low Charge Injection 6.0 pC
Low Standby Current: ICC = 1.0 nA (Max) @ TA = 25C
*OVT on Pins 4 and 8 (CTRL Logic Pins)
These are Pb−Free Devices
Typical Applications
Cell Phones
PDAs
MP3s
Digital Still Cameras
USB 2.0 Full Speed (USB1.1) − 12 Mbps Compliant
Important Information
ESD Protection:
Human Body Model (HBM) = 2500 V,
Machine Model (MM) = 200 V
Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78)
Pin−to−Pin Compatible with MAX4717
*OVT
Overvoltage Tolerant (OVT) specific pins operate higher than normal
supply voltages, with no damage to the devices or to signal integrity.
http://onsemi.com
MARKING
DIAGRAMS
A1
Microbump−10
CASE 489AA
4717EP
AYWWG
G
A1
A = Assembly Location
Y = Year
W, WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
WQFN−10
CASE 488AQ
AWMG
G
AW = Specific Device Code
M = Date Code
G = Pb−Free Device
(Note: Microdot may be in either location)
FUNCTION TABLE
IN_ NO_ NC_
0
OFF
ON
1 ON OFF
ORDERING INFORMATION
Device
Package
Shipping†
NLAS4717EPFCT1G Microbump−10 3000 /
(Pb−Free) Tape & Reel
NLAS4717EPMTR2G WQFN−10
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 7
1
Publication Order Number:
NLAS4717EP/D
1 page 2.0
1.5
1.0
0.5
0.0
0.0
NLAS4717EP
+85C
+25C
−40C
1.0 2.0 3.0 4.0
VCOM (V)
Figure 2. RDS(on) @ VCC = 5.0 V
3.0
2.5
2.0
1.5 +85C
1.0 +25C
−40C
0.5
0.0
5.0 0.0 0.5 1.0 1.5 2.0 2.5
VCOM (V)
Figure 3. RDS(on) @ VCC = 3.0 V
3.0
1.5
1.4
1.3
1.2
1.1
1.0 5.0 V
0.9
0.8
−40C
+25C
TEMPERATURE (C)
Figure 4. Delta RDS(on) @ VCC = 5.0 V
+85C
1.5
1.4
1.3
1.2
1.1
1.0 3.0 V
0.9
0.8
−40C
+25C
TEMPERATURE (C)
Figure 5. Delta RDS(on) @ VCC = 3.0 V
+85C
8
6
4
2
0
−2
−4
−6
−8
−10
0.0
5.0 V
3.0 V
1.0 2.0 3.0 4.0
VCOM (V)
Figure 6. Charge Injection
1
0.1
0.01
5.0 10
3.0 V
100
1000
10000
FREQUENCY (Hz)
100000
Figure 7. Total Harmonic Distortion
http://onsemi.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet NLAS4717EP.PDF ] |
Número de pieza | Descripción | Fabricantes |
NLAS4717EP | Dual SPDT Analog Switch | ON Semiconductor |
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